Flexible multi-level resistive memory with high current ratio by electrical triggering into insulating layer

We demonstrate a flexible multi-level resistive memory device, based on the concept of electrical triggering into an insulating layer, which exhibits a high current ratio between two memory states in the unipolar mode of operation. Due to the presence of a triggering zone in unit memory cell, three resistive memory states having different domain sizes of the conductive filaments are achieved. Each memory state is readable without the disturbances by other states and the current ratio is as high as 10³. The multi-level memory states are found to be well preserved during bending and applicable for constructing flexible and high-density data storage systems.