TY - JOUR
T1 - Fluorene-based conjugated copolymers containing hexyl-thiophene derivatives for organic thin film transistors
AU - Kong, Hoyoul
AU - Dae, Sung Chung
AU - Kang, In Nam
AU - Lim, Eunhee
AU - Young, Kwan Jung
AU - Park, Jong Hwa
AU - Chan, Eon Park
AU - Shim, Hong Ku
PY - 2007/11/20
Y1 - 2007/11/20
N2 - Two fluorene-based conjugated copolymers containing hexyl-thiophene derivatives, PF-1T and PF-4T, were synthesized via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weights (Mn) of PF-1T and PF-4T were found to be 19,100 and 13,200, respectively. These polymers were soluble in common organic solvents such as chloroform, chlorobenzene, toluene, etc. The UV-vis absorption maximum peaks of PF-1T and PF-4T in the film state were found to be 410 nm and 431 nm, respectively. Electrochemical characterization revealed that these polymers have low highest occupied molecular orbital (HOMO) levels, indicating good resistance against oxidative doping. Thin film transistor devices were fabricated using the top contact geometry. PF-1T showed much better thin-film transistor performance than PF-4T. A thin film of PF-1T gave a saturation mobility of 0.001-0.003 cm 2 V-1 s-1, an on/off ratio of 1.0 x 10 5, and a small threshold voltage of -8.3 V. To support TFT performance, we carried out DSC, AFM, and XRD measurements.
AB - Two fluorene-based conjugated copolymers containing hexyl-thiophene derivatives, PF-1T and PF-4T, were synthesized via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weights (Mn) of PF-1T and PF-4T were found to be 19,100 and 13,200, respectively. These polymers were soluble in common organic solvents such as chloroform, chlorobenzene, toluene, etc. The UV-vis absorption maximum peaks of PF-1T and PF-4T in the film state were found to be 410 nm and 431 nm, respectively. Electrochemical characterization revealed that these polymers have low highest occupied molecular orbital (HOMO) levels, indicating good resistance against oxidative doping. Thin film transistor devices were fabricated using the top contact geometry. PF-1T showed much better thin-film transistor performance than PF-4T. A thin film of PF-1T gave a saturation mobility of 0.001-0.003 cm 2 V-1 s-1, an on/off ratio of 1.0 x 10 5, and a small threshold voltage of -8.3 V. To support TFT performance, we carried out DSC, AFM, and XRD measurements.
KW - Fluorene
KW - Organic thin-film transistor (OTFT)
KW - Thiophene
UR - http://www.scopus.com/inward/record.url?scp=36949026409&partnerID=8YFLogxK
U2 - 10.5012/bkcs.2007.28.11.1945
DO - 10.5012/bkcs.2007.28.11.1945
M3 - Article
AN - SCOPUS:36949026409
SN - 0253-2964
VL - 28
SP - 1945
EP - 1950
JO - Bulletin of the Korean Chemical Society
JF - Bulletin of the Korean Chemical Society
IS - 11
ER -