Formation of a functional homo-junction interface through ZnO atomic layer passivation: Enhancement of carrier mobility and threshold voltage in a ZnO nanocrystal field effect transistor
- Youngjun Kim
- , Mincheol Chang
- , Seongeun Cho
- , Minkyong Kim
- , Hyunsik Kim
- , Eunsoo Choi
- , Hyungduk Ko
- , J. Hwang
- , Byoungnam Park
- Hongik University
- Chonnam National University
- Korea Institute of Science and Technology
Research output: Contribution to journal › Article › peer-review
20
Scopus
citations