Formation of a functional homo-junction interface through ZnO atomic layer passivation: Enhancement of carrier mobility and threshold voltage in a ZnO nanocrystal field effect transistor

Youngjun Kim, Mincheol Chang, Seongeun Cho, Minkyong Kim, Hyunsik Kim, Eunsoo Choi, Hyungduk Ko, J. Hwang, Byoungnam Park

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

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