Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using ZrO2 buffer layers

Joo Won Yoon; Young Uk Song; Byung Eun Park; Chul Ju Kim

doi:10.1080/10584580500414028

Formation of (Bi,La)₄Ti₃O₁₂ films on Si(100) substrates using ZrO₂ buffer layers

Joo Won Yoon, Young Uk Song, Byung Eun Park, Chul Ju Kim

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The ferroelectric behavior of (Bi,La)₄Ti₃O ₁₂ (BLT) films deposited on Si(100) substrates with the use of ZrO₂ buffer layers was demonstrated. ZrO₂ films were prepared using the sol-gel method. Then, they were subjected to dry O ₂ annealing in a rapid-thermal-annealing furnace. BLT films were deposited on these structures through the sol-gel method, and they were characterized through X-ray diffraction analysis and atomic-force microscopy. It was found from capacitance-voltage measurements that the BLT films had a hysteresis loop and that the memory window was about 2 V for the voltage sweep of ± 5 V. Based on these results, it can be concluded that the use of the BLT/ZrO₂/Si(100) structure in the fabrication of MFISFETs (metal-ferroelectric-insulator-semiconductor field-effect transistors) holds great promise.

Original language	English
Pages (from-to)	123-130
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	75
DOIs	https://doi.org/10.1080/10584580500414028
State	Published - 2005
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005

Keywords

BLT
FeRAM
MFIS structure
Memory window
ZrO

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10.1080/10584580500414028

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title = "Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using ZrO2 buffer layers",

abstract = "The ferroelectric behavior of (Bi,La)4Ti3O 12 (BLT) films deposited on Si(100) substrates with the use of ZrO2 buffer layers was demonstrated. ZrO2 films were prepared using the sol-gel method. Then, they were subjected to dry O 2 annealing in a rapid-thermal-annealing furnace. BLT films were deposited on these structures through the sol-gel method, and they were characterized through X-ray diffraction analysis and atomic-force microscopy. It was found from capacitance-voltage measurements that the BLT films had a hysteresis loop and that the memory window was about 2 V for the voltage sweep of ± 5 V. Based on these results, it can be concluded that the use of the BLT/ZrO2/Si(100) structure in the fabrication of MFISFETs (metal-ferroelectric-insulator-semiconductor field-effect transistors) holds great promise.",

keywords = "BLT, FeRAM, MFIS structure, Memory window, ZrO",

author = "Yoon, {Joo Won} and Song, {Young Uk} and Park, {Byung Eun} and Kim, {Chul Ju}",

year = "2005",

doi = "10.1080/10584580500414028",

language = "English",

volume = "75",

pages = "123--130",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

}

TY - JOUR

T1 - Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using ZrO2 buffer layers

AU - Yoon, Joo Won

AU - Song, Young Uk

AU - Park, Byung Eun

AU - Kim, Chul Ju

PY - 2005

Y1 - 2005

N2 - The ferroelectric behavior of (Bi,La)4Ti3O 12 (BLT) films deposited on Si(100) substrates with the use of ZrO2 buffer layers was demonstrated. ZrO2 films were prepared using the sol-gel method. Then, they were subjected to dry O 2 annealing in a rapid-thermal-annealing furnace. BLT films were deposited on these structures through the sol-gel method, and they were characterized through X-ray diffraction analysis and atomic-force microscopy. It was found from capacitance-voltage measurements that the BLT films had a hysteresis loop and that the memory window was about 2 V for the voltage sweep of ± 5 V. Based on these results, it can be concluded that the use of the BLT/ZrO2/Si(100) structure in the fabrication of MFISFETs (metal-ferroelectric-insulator-semiconductor field-effect transistors) holds great promise.

AB - The ferroelectric behavior of (Bi,La)4Ti3O 12 (BLT) films deposited on Si(100) substrates with the use of ZrO2 buffer layers was demonstrated. ZrO2 films were prepared using the sol-gel method. Then, they were subjected to dry O 2 annealing in a rapid-thermal-annealing furnace. BLT films were deposited on these structures through the sol-gel method, and they were characterized through X-ray diffraction analysis and atomic-force microscopy. It was found from capacitance-voltage measurements that the BLT films had a hysteresis loop and that the memory window was about 2 V for the voltage sweep of ± 5 V. Based on these results, it can be concluded that the use of the BLT/ZrO2/Si(100) structure in the fabrication of MFISFETs (metal-ferroelectric-insulator-semiconductor field-effect transistors) holds great promise.

KW - BLT

KW - FeRAM

KW - MFIS structure

KW - Memory window

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=33645509556&partnerID=8YFLogxK

U2 - 10.1080/10584580500414028

DO - 10.1080/10584580500414028

M3 - Conference article

AN - SCOPUS:33645509556

SN - 1058-4587

VL - 75

SP - 123

EP - 130

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

ER -

Formation of (Bi,La)₄Ti₃O₁₂ films on Si(100) substrates using ZrO₂ buffer layers

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Keywords

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