Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using ZrO2 buffer layers

Joo Won Yoon, Young Uk Song, Byung Eun Park, Chul Ju Kim

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


The ferroelectric behavior of (Bi,La)4Ti3O 12 (BLT) films deposited on Si(100) substrates with the use of ZrO2 buffer layers was demonstrated. ZrO2 films were prepared using the sol-gel method. Then, they were subjected to dry O 2 annealing in a rapid-thermal-annealing furnace. BLT films were deposited on these structures through the sol-gel method, and they were characterized through X-ray diffraction analysis and atomic-force microscopy. It was found from capacitance-voltage measurements that the BLT films had a hysteresis loop and that the memory window was about 2 V for the voltage sweep of ± 5 V. Based on these results, it can be concluded that the use of the BLT/ZrO2/Si(100) structure in the fabrication of MFISFETs (metal-ferroelectric-insulator-semiconductor field-effect transistors) holds great promise.

Original languageEnglish
Pages (from-to)123-130
Number of pages8
JournalIntegrated Ferroelectrics
StatePublished - 2005
EventSeventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China
Duration: 17 Apr 200520 Apr 2005


  • BLT
  • FeRAM
  • MFIS structure
  • Memory window
  • ZrO


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