Formation of (Bi,La)₄Ti₃O₁₂ films on Si(100) substrates using ZrO₂ buffer layers

Engineering

• Substrates 100%
• Sol-Gel Process 100%
• Voltage 100%
• Buffer Layer 100%
• Measurement 50%
• Semiconductor 50%
• Fabrication 50%
• Field-Effect Transistor 50%
• Capacitance 50%
• Windows 50%
• Rapid Thermal Annealing 50%
• Atomic Force Microscopy 50%
• X-Ray Diffraction Analysis 50%
• Deposited Film 50%

Material Science

• Buffer Layer 100%
• Zirconia 100%
• Sol-Gel 50%
• Ferroelectric Material 50%
• Field Effect Transistor 25%
• Semiconductor Material 25%
• Metal 25%
• Capacitance 25%
• Annealing 25%
• Atomic Force Microscopy 25%
• X Ray Diffraction Analysis 25%