Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using LaAlO3 buffer layers

Byung Eun Park; Hiroshi Ishiwara

doi:10.1080/00150190390238342

Formation of (Bi,La)₄Ti₃O₁₂ films on Si(100) substrates using LaAlO₃ buffer layers

Byung Eun Park, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi 3.35 La 0.75 Ti 3 O 12 (BLT) ferroelectric films and lanthanum aluminate (LaAlO 3 ) buffer layers on Si(100) substrates. LaAlO 3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N 2 annealing in a rapid thermal annealing (RTA) furnace at 800C for 1 min. On the optimized LaAlO 3 /Si structure, a Bi 3.35 La 0.75 Ti 3 O 12 film with 220-nm-thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO 3 /Si diode was about 4.0 V for a voltage sweep of 10 V. It was also found that the retention time of this diode was longer than 8 hours.

Original language	English
Pages (from-to)	145-152
Number of pages	8
Journal	Ferroelectrics
Volume	293
DOIs	https://doi.org/10.1080/00150190390238342
State	Published - 1 Jun 2003

Keywords

(Bi,La)TiO
LaAlO
MBD
MFIS structure 7755+f
Sol-gel

Access to Document

10.1080/00150190390238342

Cite this

@article{51ed1919e3554623a28a41756b644327,

title = "Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using LaAlO3 buffer layers",

abstract = "We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi 3.35 La 0.75 Ti 3 O 12 (BLT) ferroelectric films and lanthanum aluminate (LaAlO 3 ) buffer layers on Si(100) substrates. LaAlO 3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N 2 annealing in a rapid thermal annealing (RTA) furnace at 800C for 1 min. On the optimized LaAlO 3 /Si structure, a Bi 3.35 La 0.75 Ti 3 O 12 film with 220-nm-thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO 3 /Si diode was about 4.0 V for a voltage sweep of 10 V. It was also found that the retention time of this diode was longer than 8 hours.",

keywords = "(Bi,La)TiO, LaAlO, MBD, MFIS structure 7755+f, Sol-gel",

author = "Park, \{Byung Eun\} and Hiroshi Ishiwara",

year = "2003",

month = jun,

day = "1",

doi = "10.1080/00150190390238342",

language = "English",

volume = "293",

pages = "145--152",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using LaAlO3 buffer layers

AU - Park, Byung Eun

AU - Ishiwara, Hiroshi

PY - 2003/6/1

Y1 - 2003/6/1

N2 - We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi 3.35 La 0.75 Ti 3 O 12 (BLT) ferroelectric films and lanthanum aluminate (LaAlO 3 ) buffer layers on Si(100) substrates. LaAlO 3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N 2 annealing in a rapid thermal annealing (RTA) furnace at 800C for 1 min. On the optimized LaAlO 3 /Si structure, a Bi 3.35 La 0.75 Ti 3 O 12 film with 220-nm-thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO 3 /Si diode was about 4.0 V for a voltage sweep of 10 V. It was also found that the retention time of this diode was longer than 8 hours.

AB - We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi 3.35 La 0.75 Ti 3 O 12 (BLT) ferroelectric films and lanthanum aluminate (LaAlO 3 ) buffer layers on Si(100) substrates. LaAlO 3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N 2 annealing in a rapid thermal annealing (RTA) furnace at 800C for 1 min. On the optimized LaAlO 3 /Si structure, a Bi 3.35 La 0.75 Ti 3 O 12 film with 220-nm-thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO 3 /Si diode was about 4.0 V for a voltage sweep of 10 V. It was also found that the retention time of this diode was longer than 8 hours.

KW - (Bi,La)TiO

KW - LaAlO

KW - MBD

KW - MFIS structure 7755+f

KW - Sol-gel

UR - https://www.scopus.com/pages/publications/33746305332

U2 - 10.1080/00150190390238342

DO - 10.1080/00150190390238342

M3 - Article

AN - SCOPUS:33746305332

SN - 0015-0193

VL - 293

SP - 145

EP - 152

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Formation of (Bi,La)₄Ti₃O₁₂ films on Si(100) substrates using LaAlO₃ buffer layers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this