Formation of ferroelectric (Bi, Nd)4Ti3O12 thin films on HfO2/Si(100) Structures for MFIS-type ferroelectric memory applications

Yoshiaki Tabuchi; Byung Eun Park; Kouzi Aizawa; Yoshihito Kawashima; Kazuhiro Takahashi; Kazumi Kato; Yoshihiro Arimoto; Hiroshi Ishiwara

doi:10.1080/10584580490892917

Formation of ferroelectric (Bi, Nd)₄Ti₃O₁₂ thin films on HfO₂/Si(100) Structures for MFIS-type ferroelectric memory applications

Yoshiaki Tabuchi, Byung Eun Park, Kouzi Aizawa, Yoshihito Kawashima, Kazuhiro Takahashi, Kazumi Kato, Yoshihiro Arimoto, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

MFIS (metal-ferroelectric-insulator-semiconductor) diodes and transistors having a BNT((Bi, Nd)₄Ti₃O₁₂)/HfO ₂/Si (100) structure were fabricated and their data retention characteristics were characterized. HfO₂ and BNT thin films were formed by E-B (electron beam) deposition and chemical solution deposition (CSD) methods, respectively. The Pt/BNT/HfO₂/Si MFIS diodes showed the hysteretic -V (capacitance-voltage) characteristic and the retention time was as long as 5 days. In the case of the Pt/BNT/HfO₂/Si MFIS transistor, the drain current on-off ratio was larger than 10⁴ initially and it was about 1,000 at a time of 1 day after the "write" operation.

Original language	English
Pages (from-to)	125-134
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	65
DOIs	https://doi.org/10.1080/10584580490892917
State	Published - 2004

Keywords

BNT
Data retention
Diodes
FeRAM
HfO
MFIS
Transistor

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10.1080/10584580490892917

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title = "Formation of ferroelectric (Bi, Nd)4Ti3O12 thin films on HfO2/Si(100) Structures for MFIS-type ferroelectric memory applications",

abstract = "MFIS (metal-ferroelectric-insulator-semiconductor) diodes and transistors having a BNT((Bi, Nd)4Ti3O12)/HfO 2/Si (100) structure were fabricated and their data retention characteristics were characterized. HfO2 and BNT thin films were formed by E-B (electron beam) deposition and chemical solution deposition (CSD) methods, respectively. The Pt/BNT/HfO2/Si MFIS diodes showed the hysteretic -V (capacitance-voltage) characteristic and the retention time was as long as 5 days. In the case of the Pt/BNT/HfO2/Si MFIS transistor, the drain current on-off ratio was larger than 104 initially and it was about 1,000 at a time of 1 day after the {"}write{"} operation.",

keywords = "BNT, Data retention, Diodes, FeRAM, HfO, MFIS, Transistor",

author = "Yoshiaki Tabuchi and Park, {Byung Eun} and Kouzi Aizawa and Yoshihito Kawashima and Kazuhiro Takahashi and Kazumi Kato and Yoshihiro Arimoto and Hiroshi Ishiwara",

year = "2004",

doi = "10.1080/10584580490892917",

language = "English",

volume = "65",

pages = "125--134",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Formation of ferroelectric (Bi, Nd)4Ti3O12 thin films on HfO2/Si(100) Structures for MFIS-type ferroelectric memory applications

AU - Tabuchi, Yoshiaki

AU - Park, Byung Eun

AU - Aizawa, Kouzi

AU - Kawashima, Yoshihito

AU - Takahashi, Kazuhiro

AU - Kato, Kazumi

AU - Arimoto, Yoshihiro

AU - Ishiwara, Hiroshi

PY - 2004

Y1 - 2004

N2 - MFIS (metal-ferroelectric-insulator-semiconductor) diodes and transistors having a BNT((Bi, Nd)4Ti3O12)/HfO 2/Si (100) structure were fabricated and their data retention characteristics were characterized. HfO2 and BNT thin films were formed by E-B (electron beam) deposition and chemical solution deposition (CSD) methods, respectively. The Pt/BNT/HfO2/Si MFIS diodes showed the hysteretic -V (capacitance-voltage) characteristic and the retention time was as long as 5 days. In the case of the Pt/BNT/HfO2/Si MFIS transistor, the drain current on-off ratio was larger than 104 initially and it was about 1,000 at a time of 1 day after the "write" operation.

AB - MFIS (metal-ferroelectric-insulator-semiconductor) diodes and transistors having a BNT((Bi, Nd)4Ti3O12)/HfO 2/Si (100) structure were fabricated and their data retention characteristics were characterized. HfO2 and BNT thin films were formed by E-B (electron beam) deposition and chemical solution deposition (CSD) methods, respectively. The Pt/BNT/HfO2/Si MFIS diodes showed the hysteretic -V (capacitance-voltage) characteristic and the retention time was as long as 5 days. In the case of the Pt/BNT/HfO2/Si MFIS transistor, the drain current on-off ratio was larger than 104 initially and it was about 1,000 at a time of 1 day after the "write" operation.

KW - BNT

KW - Data retention

KW - Diodes

KW - FeRAM

KW - HfO

KW - MFIS

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=33751161255&partnerID=8YFLogxK

U2 - 10.1080/10584580490892917

DO - 10.1080/10584580490892917

M3 - Article

AN - SCOPUS:33751161255

SN - 1058-4587

VL - 65

SP - 125

EP - 134

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Formation of ferroelectric (Bi, Nd)₄Ti₃O₁₂ thin films on HfO₂/Si(100) Structures for MFIS-type ferroelectric memory applications

Abstract

Keywords

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