Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Byung Eun Park; Hiroshi Ishiwara

doi:10.1063/1.1556966

Formation of LaAlO₃ films on Si(100) substrates using molecular beam deposition

Byung Eun Park, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

137 Scopus citations

Abstract

Formation of lanthanum aluminate (LaAlO₃) films were deposited on Si(100) substrates using molecular beam deposition method was demonstrated. It was shown that crystallographical property of the LaAlO₃ films were amorphous after annealing up to 800°C. It was found that the electrical properties of metal-insulator-semiconductor (MIS) diodes were improved by about eight orders of magnitude. Results showed that LaAlO₃ thin films was promising for fabricating MFIS FETs.

Original language	English
Pages (from-to)	1197-1199
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1556966
State	Published - 24 Feb 2003

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title = "Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition",

abstract = "Formation of lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates using molecular beam deposition method was demonstrated. It was shown that crystallographical property of the LaAlO3 films were amorphous after annealing up to 800°C. It was found that the electrical properties of metal-insulator-semiconductor (MIS) diodes were improved by about eight orders of magnitude. Results showed that LaAlO3 thin films was promising for fabricating MFIS FETs.",

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N2 - Formation of lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates using molecular beam deposition method was demonstrated. It was shown that crystallographical property of the LaAlO3 films were amorphous after annealing up to 800°C. It was found that the electrical properties of metal-insulator-semiconductor (MIS) diodes were improved by about eight orders of magnitude. Results showed that LaAlO3 thin films was promising for fabricating MFIS FETs.

AB - Formation of lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates using molecular beam deposition method was demonstrated. It was shown that crystallographical property of the LaAlO3 films were amorphous after annealing up to 800°C. It was found that the electrical properties of metal-insulator-semiconductor (MIS) diodes were improved by about eight orders of magnitude. Results showed that LaAlO3 thin films was promising for fabricating MFIS FETs.

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Formation of LaAlO₃ films on Si(100) substrates using molecular beam deposition

Abstract

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