Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

Kyoung Min Lee; Tae Hwan Kim; Wan Shick Hong

doi:10.1016/j.scriptamat.2008.08.006

Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

Kyoung Min Lee, Tae Hwan Kim, Wan Shick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH₄, NH₃ and H₂ was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H₂/SiH₄ mixture ratio that was higher than four.

Original language	English
Pages (from-to)	1190-1192
Number of pages	3
Journal	Scripta Materialia
Volume	59
Issue number	11
DOIs	https://doi.org/10.1016/j.scriptamat.2008.08.006
State	Published - Dec 2008

Keywords

Catalytic CVD
Low temperature process
Silicon nanocrystals

Access to Document

10.1016/j.scriptamat.2008.08.006

Cite this

@article{07b81e9b5e9e4722bbe147bddbdcd81d,

title = "Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)",

abstract = "Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH4, NH3 and H2 was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H2/SiH4 mixture ratio that was higher than four.",

keywords = "Catalytic CVD, Low temperature process, Silicon nanocrystals",

author = "Lee, \{Kyoung Min\} and Kim, \{Tae Hwan\} and Hong, \{Wan Shick\}",

year = "2008",

month = dec,

doi = "10.1016/j.scriptamat.2008.08.006",

language = "English",

volume = "59",

pages = "1190--1192",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "11",

}

TY - JOUR

T1 - Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

AU - Lee, Kyoung Min

AU - Kim, Tae Hwan

AU - Hong, Wan Shick

PY - 2008/12

Y1 - 2008/12

N2 - Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH4, NH3 and H2 was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H2/SiH4 mixture ratio that was higher than four.

AB - Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH4, NH3 and H2 was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H2/SiH4 mixture ratio that was higher than four.

KW - Catalytic CVD

KW - Low temperature process

KW - Silicon nanocrystals

UR - https://www.scopus.com/pages/publications/52149086992

U2 - 10.1016/j.scriptamat.2008.08.006

DO - 10.1016/j.scriptamat.2008.08.006

M3 - Article

AN - SCOPUS:52149086992

SN - 1359-6462

VL - 59

SP - 1190

EP - 1192

JO - Scripta Materialia

JF - Scripta Materialia

IS - 11

ER -

Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this