Formation of silicate-added (Bi,La)4Ti3O12 films on LaAlO3/Si(100) structures

Byung Eun Park; Hiroshi Ishiwara

doi:10.1080/10584580390254510

Formation of silicate-added (Bi,La)₄Ti₃O₁₂ films on LaAlO₃/Si(100) structures

Byung Eun Park, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We fabricated MFIS (metal-ferroelectric-insulator-semiconductor) diodes with ((Bi,La)₄Ti₃O₁₂: BLT) films and lanthanum silicate (La₂SiO₃: LSO)-added BLT films formed on LaA1O₃/Si(100) structures. LaAlO₃ films were prepared by an MBD (molecular beam deposition) method. After the film deposition, they were subjected to exsite N₂ annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. BLT films and LSO-added BLT films were deposited on these LaAlO₃/Si structures using a sol-gel technique. The memory windows of BLT and LSO-added BLT films were 3.0 V and 2.1 V, respectively. It was found from the current density-voltage (I-V) characteristics that the insulation property of the LSO-added BLT film was superior to that of the BLT film. We conclude from these results that LaAlO₃ is an excellent candidate of a buffer layer for forming ferroelectric-gate FETs and that the LSO-added BLT film is suitable for low voltage operation of the FETs.

Original language	English
Pages (from-to)	179-186
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	52
DOIs	https://doi.org/10.1080/10584580390254510
State	Published - 2003

Keywords

BLT
FeRAM
LaAlO
Lanthanum silicate
MFIS structure
Memory window

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@article{53191d87895c46e0ae391ec792da2673,

title = "Formation of silicate-added (Bi,La)4Ti3O12 films on LaAlO3/Si(100) structures",

abstract = "We fabricated MFIS (metal-ferroelectric-insulator-semiconductor) diodes with ((Bi,La)4Ti3O12: BLT) films and lanthanum silicate (La2SiO3: LSO)-added BLT films formed on LaA1O3/Si(100) structures. LaAlO3 films were prepared by an MBD (molecular beam deposition) method. After the film deposition, they were subjected to exsite N2 annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. BLT films and LSO-added BLT films were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory windows of BLT and LSO-added BLT films were 3.0 V and 2.1 V, respectively. It was found from the current density-voltage (I-V) characteristics that the insulation property of the LSO-added BLT film was superior to that of the BLT film. We conclude from these results that LaAlO3 is an excellent candidate of a buffer layer for forming ferroelectric-gate FETs and that the LSO-added BLT film is suitable for low voltage operation of the FETs.",

keywords = "BLT, FeRAM, LaAlO, Lanthanum silicate, MFIS structure, Memory window",

author = "Park, {Byung Eun} and Hiroshi Ishiwara",

year = "2003",

doi = "10.1080/10584580390254510",

language = "English",

volume = "52",

pages = "179--186",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Formation of silicate-added (Bi,La)4Ti3O12 films on LaAlO3/Si(100) structures

AU - Park, Byung Eun

AU - Ishiwara, Hiroshi

PY - 2003

Y1 - 2003

N2 - We fabricated MFIS (metal-ferroelectric-insulator-semiconductor) diodes with ((Bi,La)4Ti3O12: BLT) films and lanthanum silicate (La2SiO3: LSO)-added BLT films formed on LaA1O3/Si(100) structures. LaAlO3 films were prepared by an MBD (molecular beam deposition) method. After the film deposition, they were subjected to exsite N2 annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. BLT films and LSO-added BLT films were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory windows of BLT and LSO-added BLT films were 3.0 V and 2.1 V, respectively. It was found from the current density-voltage (I-V) characteristics that the insulation property of the LSO-added BLT film was superior to that of the BLT film. We conclude from these results that LaAlO3 is an excellent candidate of a buffer layer for forming ferroelectric-gate FETs and that the LSO-added BLT film is suitable for low voltage operation of the FETs.

AB - We fabricated MFIS (metal-ferroelectric-insulator-semiconductor) diodes with ((Bi,La)4Ti3O12: BLT) films and lanthanum silicate (La2SiO3: LSO)-added BLT films formed on LaA1O3/Si(100) structures. LaAlO3 films were prepared by an MBD (molecular beam deposition) method. After the film deposition, they were subjected to exsite N2 annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. BLT films and LSO-added BLT films were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory windows of BLT and LSO-added BLT films were 3.0 V and 2.1 V, respectively. It was found from the current density-voltage (I-V) characteristics that the insulation property of the LSO-added BLT film was superior to that of the BLT film. We conclude from these results that LaAlO3 is an excellent candidate of a buffer layer for forming ferroelectric-gate FETs and that the LSO-added BLT film is suitable for low voltage operation of the FETs.

KW - BLT

KW - FeRAM

KW - LaAlO

KW - Lanthanum silicate

KW - MFIS structure

KW - Memory window

UR - http://www.scopus.com/inward/record.url?scp=33751188331&partnerID=8YFLogxK

U2 - 10.1080/10584580390254510

DO - 10.1080/10584580390254510

M3 - Article

AN - SCOPUS:33751188331

SN - 1058-4587

VL - 52

SP - 179

EP - 186

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Formation of silicate-added (Bi,La)₄Ti₃O₁₂ films on LaAlO₃/Si(100) structures

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Keywords

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