Formation of silicate-added (Bi,La)4Ti3O12 films on LaAlO3/Si(100) structures

Byung Eun Park, Hiroshi Ishiwara

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We fabricated MFIS (metal-ferroelectric-insulator-semiconductor) diodes with ((Bi,La)4Ti3O12: BLT) films and lanthanum silicate (La2SiO3: LSO)-added BLT films formed on LaA1O3/Si(100) structures. LaAlO3 films were prepared by an MBD (molecular beam deposition) method. After the film deposition, they were subjected to exsite N2 annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. BLT films and LSO-added BLT films were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory windows of BLT and LSO-added BLT films were 3.0 V and 2.1 V, respectively. It was found from the current density-voltage (I-V) characteristics that the insulation property of the LSO-added BLT film was superior to that of the BLT film. We conclude from these results that LaAlO3 is an excellent candidate of a buffer layer for forming ferroelectric-gate FETs and that the LSO-added BLT film is suitable for low voltage operation of the FETs.

Original languageEnglish
Pages (from-to)179-186
Number of pages8
JournalIntegrated Ferroelectrics
StatePublished - 2003


  • BLT
  • FeRAM
  • LaAlO
  • Lanthanum silicate
  • MFIS structure
  • Memory window


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