Formation of the CuPt-type ordered structure in CdxZn1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate

H. S. Lee; M. S. Kwon; J. Y. Lee; T. W. Kim; H. L. Park

doi:10.1023/A:1025458102274

Formation of the CuPt-type ordered structure in Cd_xZn_1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate

H. S. Lee, M. S. Kwon, J. Y. Lee, T. W. Kim, H. L. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Cross-sectional transmission electron microscopy (XTEM) was employed to investigate the atomic and the ordered structure of the Cd_xZn_1-xTe epilayer grown on znTe/GaAs through the selected area electron diffraction pattern (SADP) and high-resolution transmission electron microscopy (HRTEM) technique. The electrom beam direction was [110], which was confirmed by anisotropic etch pitch formed by chemical etching and the following observation by optical microscopy. Conventional TEM image showed that the thickness of ZnTe buffer layer was about 800 nm and that of Cd_xZn_1-xTe about 2.5μm.

Original language	English
Pages (from-to)	1263-1267
Number of pages	5
Journal	Journal of Materials Science Letters
Volume	22
Issue number	18
DOIs	https://doi.org/10.1023/A:1025458102274
State	Published - 15 Sep 2003

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title = "Formation of the CuPt-type ordered structure in CdxZn1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate",

abstract = "Cross-sectional transmission electron microscopy (XTEM) was employed to investigate the atomic and the ordered structure of the CdxZn1-xTe epilayer grown on znTe/GaAs through the selected area electron diffraction pattern (SADP) and high-resolution transmission electron microscopy (HRTEM) technique. The electrom beam direction was [110], which was confirmed by anisotropic etch pitch formed by chemical etching and the following observation by optical microscopy. Conventional TEM image showed that the thickness of ZnTe buffer layer was about 800 nm and that of CdxZn1-xTe about 2.5μm.",

author = "Lee, {H. S.} and Kwon, {M. S.} and Lee, {J. Y.} and Kim, {T. W.} and Park, {H. L.}",

year = "2003",

month = sep,

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doi = "10.1023/A:1025458102274",

language = "English",

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T1 - Formation of the CuPt-type ordered structure in CdxZn1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate

AU - Lee, H. S.

AU - Kwon, M. S.

AU - Lee, J. Y.

AU - Kim, T. W.

AU - Park, H. L.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Cross-sectional transmission electron microscopy (XTEM) was employed to investigate the atomic and the ordered structure of the CdxZn1-xTe epilayer grown on znTe/GaAs through the selected area electron diffraction pattern (SADP) and high-resolution transmission electron microscopy (HRTEM) technique. The electrom beam direction was [110], which was confirmed by anisotropic etch pitch formed by chemical etching and the following observation by optical microscopy. Conventional TEM image showed that the thickness of ZnTe buffer layer was about 800 nm and that of CdxZn1-xTe about 2.5μm.

AB - Cross-sectional transmission electron microscopy (XTEM) was employed to investigate the atomic and the ordered structure of the CdxZn1-xTe epilayer grown on znTe/GaAs through the selected area electron diffraction pattern (SADP) and high-resolution transmission electron microscopy (HRTEM) technique. The electrom beam direction was [110], which was confirmed by anisotropic etch pitch formed by chemical etching and the following observation by optical microscopy. Conventional TEM image showed that the thickness of ZnTe buffer layer was about 800 nm and that of CdxZn1-xTe about 2.5μm.

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AN - SCOPUS:0141940566

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VL - 22

SP - 1263

EP - 1267

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 18

ER -

Formation of the CuPt-type ordered structure in Cd_xZn_1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate

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