Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

Sungju Choi, Ga Won Yang, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun Seok Choi, Namhyun Lee, Gang Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong Ho Bae, Dae Hwan Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The degradation of the fin-type buried-channel-array transistor (BCAT) in dynamic random access memory (DRAM) cell is investigated under Fowler-Nordheim stress at various temperatures, including 77 K. While the increase in the OFF current is dominated by the Shockley-Read-Hall junction leakage, the threshold voltage shift (Δ VT) comprises a positive component due to the interface trap generation and a negative component resulting from the electric field concentration-induced charge trapping into the gate insulator bulk, with respective activation energies of 0.22 and 0.13 eV. Furthermore, based on the consistency between the experimentally decomposed Δ VT components and the simulated ones, it is found that the anode hole injection dominates the degradations of the wordline-active operation and refresh time in cryogenic DRAM.

Original languageEnglish
Pages (from-to)48-52
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume70
Issue number1
DOIs
StatePublished - 1 Jan 2023

Keywords

  • Anode hole injection
  • Fowler Nordheim (FN) stress
  • buried-channel-array transistor (BCAT)
  • cryogenic
  • dynamic random access memory (DRAM) cell
  • hole trapping
  • interface trap

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