Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

Sungju Choi; Ga Won Yang; Sangwon Lee; Jingyu Park; Changwook Kim; Jun Park; Hyun Seok Choi; Namhyun Lee; Gang Jun Kim; Yoon Kim; Myounggon Kang; Changhyun Kim; Jong Ho Bae; Dae Hwan Kim

doi:10.1109/TED.2022.3221028

Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

Sungju Choi, Ga Won Yang, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun Seok Choi, Namhyun Lee, Gang Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong Ho Bae, Dae Hwan Kim

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The degradation of the fin-type buried-channel-array transistor (BCAT) in dynamic random access memory (DRAM) cell is investigated under Fowler-Nordheim stress at various temperatures, including 77 K. While the increase in the OFF current is dominated by the Shockley-Read-Hall junction leakage, the threshold voltage shift (Δ VT) comprises a positive component due to the interface trap generation and a negative component resulting from the electric field concentration-induced charge trapping into the gate insulator bulk, with respective activation energies of 0.22 and 0.13 eV. Furthermore, based on the consistency between the experimentally decomposed Δ VT components and the simulated ones, it is found that the anode hole injection dominates the degradations of the wordline-active operation and refresh time in cryogenic DRAM.

Original language	English
Pages (from-to)	48-52
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	1
DOIs	https://doi.org/10.1109/TED.2022.3221028
State	Published - 1 Jan 2023

Keywords

Anode hole injection
Fowler Nordheim (FN) stress
buried-channel-array transistor (BCAT)
cryogenic
dynamic random access memory (DRAM) cell
hole trapping
interface trap

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10.1109/TED.2022.3221028

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Choi, S., Yang, G. W., Lee, S., Park, J., Kim, C., Park, J., Choi, H. S., Lee, N., Kim, G. J., Kim, Y., Kang, M., Kim, C., Bae, J. H., & Kim, D. H. (2023). Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications. IEEE Transactions on Electron Devices, 70(1), 48-52. https://doi.org/10.1109/TED.2022.3221028

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title = "Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications",

abstract = "The degradation of the fin-type buried-channel-array transistor (BCAT) in dynamic random access memory (DRAM) cell is investigated under Fowler-Nordheim stress at various temperatures, including 77 K. While the increase in the OFF current is dominated by the Shockley-Read-Hall junction leakage, the threshold voltage shift (Δ VT) comprises a positive component due to the interface trap generation and a negative component resulting from the electric field concentration-induced charge trapping into the gate insulator bulk, with respective activation energies of 0.22 and 0.13 eV. Furthermore, based on the consistency between the experimentally decomposed Δ VT components and the simulated ones, it is found that the anode hole injection dominates the degradations of the wordline-active operation and refresh time in cryogenic DRAM.",

keywords = "Anode hole injection, Fowler Nordheim (FN) stress, buried-channel-array transistor (BCAT), cryogenic, dynamic random access memory (DRAM) cell, hole trapping, interface trap",

author = "Sungju Choi and Yang, \{Ga Won\} and Sangwon Lee and Jingyu Park and Changwook Kim and Jun Park and Choi, \{Hyun Seok\} and Namhyun Lee and Kim, \{Gang Jun\} and Yoon Kim and Myounggon Kang and Changhyun Kim and Bae, \{Jong Ho\} and Kim, \{Dae Hwan\}",

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doi = "10.1109/TED.2022.3221028",

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T1 - Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

AU - Choi, Sungju

AU - Yang, Ga Won

AU - Lee, Sangwon

AU - Park, Jingyu

AU - Kim, Changwook

AU - Park, Jun

AU - Choi, Hyun Seok

AU - Lee, Namhyun

AU - Kim, Gang Jun

AU - Kim, Yoon

AU - Kang, Myounggon

AU - Kim, Changhyun

AU - Bae, Jong Ho

AU - Kim, Dae Hwan

PY - 2023/1/1

Y1 - 2023/1/1

N2 - The degradation of the fin-type buried-channel-array transistor (BCAT) in dynamic random access memory (DRAM) cell is investigated under Fowler-Nordheim stress at various temperatures, including 77 K. While the increase in the OFF current is dominated by the Shockley-Read-Hall junction leakage, the threshold voltage shift (Δ VT) comprises a positive component due to the interface trap generation and a negative component resulting from the electric field concentration-induced charge trapping into the gate insulator bulk, with respective activation energies of 0.22 and 0.13 eV. Furthermore, based on the consistency between the experimentally decomposed Δ VT components and the simulated ones, it is found that the anode hole injection dominates the degradations of the wordline-active operation and refresh time in cryogenic DRAM.

AB - The degradation of the fin-type buried-channel-array transistor (BCAT) in dynamic random access memory (DRAM) cell is investigated under Fowler-Nordheim stress at various temperatures, including 77 K. While the increase in the OFF current is dominated by the Shockley-Read-Hall junction leakage, the threshold voltage shift (Δ VT) comprises a positive component due to the interface trap generation and a negative component resulting from the electric field concentration-induced charge trapping into the gate insulator bulk, with respective activation energies of 0.22 and 0.13 eV. Furthermore, based on the consistency between the experimentally decomposed Δ VT components and the simulated ones, it is found that the anode hole injection dominates the degradations of the wordline-active operation and refresh time in cryogenic DRAM.

KW - Anode hole injection

KW - Fowler Nordheim (FN) stress

KW - buried-channel-array transistor (BCAT)

KW - cryogenic

KW - dynamic random access memory (DRAM) cell

KW - hole trapping

KW - interface trap

UR - https://www.scopus.com/pages/publications/85142847956

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DO - 10.1109/TED.2022.3221028

M3 - Article

AN - SCOPUS:85142847956

SN - 0018-9383

VL - 70

SP - 48

EP - 52

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

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