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Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

  • Sungju Choi
  • , Ga Won Yang
  • , Sangwon Lee
  • , Jingyu Park
  • , Changwook Kim
  • , Jun Park
  • , Hyun Seok Choi
  • , Namhyun Lee
  • , Gang Jun Kim
  • , Yoon Kim
  • , Myounggon Kang
  • , Changhyun Kim
  • , Jong Ho Bae
  • , Dae Hwan Kim
  • Kookmin University
  • University of Seoul
  • Samsung
  • Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

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