Gain Characteristics of Strained‐Layer InGaAs/GaAs Quantum Well Lasers

G. Zhang, M. Pessa, D. Ahn

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Original language	English
Pages (from-to)	K75-K79
Journal	Physica Status Solidi (B): Basic Research
Volume	176
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221760236
State	Published - 1 Apr 1993

Access to Document

@article{917ed83c3c194ac79abb3f3e3ca4dabc,

title = "Gain Characteristics of Strained‐Layer InGaAs/GaAs Quantum Well Lasers",

author = "G. Zhang and M. Pessa and D. Ahn",

year = "1993",

month = apr,

day = "1",

doi = "10.1002/pssb.2221760236",

language = "English",

volume = "176",

pages = "K75--K79",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "2",

}

TY - JOUR

T1 - Gain Characteristics of Strained‐Layer InGaAs/GaAs Quantum Well Lasers

AU - Zhang, G.

AU - Pessa, M.

AU - Ahn, D.

PY - 1993/4/1

Y1 - 1993/4/1

UR - https://www.scopus.com/pages/publications/84990672920

U2 - 10.1002/pssb.2221760236

DO - 10.1002/pssb.2221760236

M3 - Article

AN - SCOPUS:84990672920

SN - 0370-1972

VL - 176

SP - K75-K79

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 2

ER -