GaN-based light-emitting diodes on origami substrates

Younghun Jung; Xiaotie Wang; Jiwan Kim; Sung Hyun Kim; Fan Ren; Stephen J. Pearton; Jihyun Kim

doi:10.1063/1.4726123

GaN-based light-emitting diodes on origami substrates

Younghun Jung
, Xiaotie Wang
, Jiwan Kim
, Sung Hyun Kim
, Fan Ren
, Stephen J. Pearton
, Jihyun Kim

Department of Materials Science and Engineering

Korea University
University of Florida

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system (λ = 193 nm) to remove the sapphire substrate and produce freestanding blue LED templates. The threshold voltage (∼2.7 V), current-voltage characteristics, and peak emission wavelength (442 nm) were not changed after the paper substrate was subsequently wrinkled. We were able to demonstrate transfers to both planar and folded (origami) paper structures, showing the promise of the LLO process for transferring LEDs to arbitrary surfaces.

Original language	English
Article number	231113
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726123
State	Published - 4 Jun 2012

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abstract = "GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system (λ = 193 nm) to remove the sapphire substrate and produce freestanding blue LED templates. The threshold voltage (∼2.7 V), current-voltage characteristics, and peak emission wavelength (442 nm) were not changed after the paper substrate was subsequently wrinkled. We were able to demonstrate transfers to both planar and folded (origami) paper structures, showing the promise of the LLO process for transferring LEDs to arbitrary surfaces.",

author = "Younghun Jung and Xiaotie Wang and Jiwan Kim and \{Hyun Kim\}, Sung and Fan Ren and Pearton, \{Stephen J.\} and Jihyun Kim",

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T1 - GaN-based light-emitting diodes on origami substrates

AU - Jung, Younghun

AU - Wang, Xiaotie

AU - Kim, Jiwan

AU - Hyun Kim, Sung

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Jihyun

PY - 2012/6/4

Y1 - 2012/6/4

N2 - GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system (λ = 193 nm) to remove the sapphire substrate and produce freestanding blue LED templates. The threshold voltage (∼2.7 V), current-voltage characteristics, and peak emission wavelength (442 nm) were not changed after the paper substrate was subsequently wrinkled. We were able to demonstrate transfers to both planar and folded (origami) paper structures, showing the promise of the LLO process for transferring LEDs to arbitrary surfaces.

AB - GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system (λ = 193 nm) to remove the sapphire substrate and produce freestanding blue LED templates. The threshold voltage (∼2.7 V), current-voltage characteristics, and peak emission wavelength (442 nm) were not changed after the paper substrate was subsequently wrinkled. We were able to demonstrate transfers to both planar and folded (origami) paper structures, showing the promise of the LLO process for transferring LEDs to arbitrary surfaces.

UR - https://www.scopus.com/pages/publications/84862128468

U2 - 10.1063/1.4726123

DO - 10.1063/1.4726123

M3 - Article

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231113

ER -

GaN-based light-emitting diodes on origami substrates

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