Abstract
We describe the structure and avalanche gain of microstrip pixel detectors. Each anode is a square 20 μm×20 μm in size connected to an individual pad through a plated center section. The cathodes are plated, squares interconnected to a common lead. The anode squares have a pitch of 200 μm in both x-and y- directions. The anodes and cathodes are aluminum layers deposited on amorphous silicon alloyed with carbon (a-Si:C:H) to produce a bulk resistivity of approximately 1013 Ωcm. Measurements on signals from a group of anodes shows an avalanche gas gain close to 104 at a cathode-anode potential of 640 volts using a gas mixture of 50/50 argon-ethane. The avalanche gain is a factor of 3 higher than that of a same pitch microstrip device. For our initial measurements, 16 anodes were connected together to a charge sensitive preamplifier. In a final chamber each anode would be connected to a readout a-Si:H p-i-n diode and signals read out sequentially as in fiat screen devices.
Original language | English |
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Pages | 662-666 |
Number of pages | 5 |
State | Published - 1996 |
Event | Proceedings of the 1996 IEEE Nuclear Science Symposium. Part 1 (of 3) - Anaheim, CA, USA Duration: 2 Nov 1996 → 9 Nov 1996 |
Conference
Conference | Proceedings of the 1996 IEEE Nuclear Science Symposium. Part 1 (of 3) |
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City | Anaheim, CA, USA |
Period | 2/11/96 → 9/11/96 |