Gate bias controlled NDR in an in-plane-gate quantum dot transistor

S. H. Son; Y. S. Choi; S. W. Hwang; J. I. Lee; Y. J. Park; Y. S. Yu; D. Ahn

doi:10.1016/j.physe.2005.12.122

Gate bias controlled NDR in an in-plane-gate quantum dot transistor

S. H. Son, Y. S. Choi, S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

Original language	English
Pages (from-to)	532-535
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2005.12.122
State	Published - May 2006

Keywords

Negative differential resistance
Quantum dot
Single-electron tunneling

Access to Document

10.1016/j.physe.2005.12.122

Cite this

@article{525a7e793046433e94821a3ae3a1be9e,

title = "Gate bias controlled NDR in an in-plane-gate quantum dot transistor",

abstract = "We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.",

keywords = "Negative differential resistance, Quantum dot, Single-electron tunneling",

author = "Son, {S. H.} and Choi, {Y. S.} and Hwang, {S. W.} and Lee, {J. I.} and Park, {Y. J.} and Yu, {Y. S.} and D. Ahn",

year = "2006",

month = may,

doi = "10.1016/j.physe.2005.12.122",

language = "English",

volume = "32",

pages = "532--535",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Gate bias controlled NDR in an in-plane-gate quantum dot transistor

AU - Son, S. H.

AU - Choi, Y. S.

AU - Hwang, S. W.

AU - Lee, J. I.

AU - Park, Y. J.

AU - Yu, Y. S.

AU - Ahn, D.

PY - 2006/5

Y1 - 2006/5

N2 - We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

AB - We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

KW - Negative differential resistance

KW - Quantum dot

KW - Single-electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=33646470695&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2005.12.122

DO - 10.1016/j.physe.2005.12.122

M3 - Article

AN - SCOPUS:33646470695

SN - 1386-9477

VL - 32

SP - 532

EP - 535

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2 SPEC. ISS.

ER -

Gate bias controlled NDR in an in-plane-gate quantum dot transistor

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this