Gate bias controlled NDR in an in-plane-gate quantum dot transistor

S. H. Son, Y. S. Choi, S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu, D. Ahn

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

Original languageEnglish
Pages (from-to)532-535
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2 SPEC. ISS.
StatePublished - May 2006


  • Negative differential resistance
  • Quantum dot
  • Single-electron tunneling


Dive into the research topics of 'Gate bias controlled NDR in an in-plane-gate quantum dot transistor'. Together they form a unique fingerprint.

Cite this