Gate bias controlled NDR in an in-plane-gate quantum dot transistor

S. H. Son; Y. S. Choi; S. W. Hwang; J. I. Lee; Y. J. Park; Y. S. Yu; D. Ahn

doi:10.1016/j.physe.2005.12.122

Gate bias controlled NDR in an in-plane-gate quantum dot transistor

S. H. Son
, Y. S. Choi
, S. W. Hwang
, J. I. Lee
, Y. J. Park
, Y. S. Yu
, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

Original language	English
Pages (from-to)	532-535
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2005.12.122
State	Published - May 2006

Keywords

Negative differential resistance
Quantum dot
Single-electron tunneling

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10.1016/j.physe.2005.12.122

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title = "Gate bias controlled NDR in an in-plane-gate quantum dot transistor",

abstract = "We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.",

keywords = "Negative differential resistance, Quantum dot, Single-electron tunneling",

author = "Son, \{S. H.\} and Choi, \{Y. S.\} and Hwang, \{S. W.\} and Lee, \{J. I.\} and Park, \{Y. J.\} and Yu, \{Y. S.\} and D. Ahn",

year = "2006",

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doi = "10.1016/j.physe.2005.12.122",

language = "English",

volume = "32",

pages = "532--535",

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number = "1-2 SPEC. ISS.",

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TY - JOUR

T1 - Gate bias controlled NDR in an in-plane-gate quantum dot transistor

AU - Son, S. H.

AU - Choi, Y. S.

AU - Hwang, S. W.

AU - Lee, J. I.

AU - Park, Y. J.

AU - Yu, Y. S.

AU - Ahn, D.

PY - 2006/5

Y1 - 2006/5

N2 - We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

AB - We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.

KW - Negative differential resistance

KW - Quantum dot

KW - Single-electron tunneling

UR - https://www.scopus.com/pages/publications/33646470695

U2 - 10.1016/j.physe.2005.12.122

DO - 10.1016/j.physe.2005.12.122

M3 - Article

AN - SCOPUS:33646470695

SN - 1386-9477

VL - 32

SP - 532

EP - 535

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2 SPEC. ISS.

ER -

Gate bias controlled NDR in an in-plane-gate quantum dot transistor

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Keywords

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