Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

K. H. Cho; S. H. Son; H. K. Kim; Y. C. Jung; B. Naser; J. F. Lin; S. W. Hwang; D. Ahn; J. P. Bird; B. G. Park

doi:10.1109/imnc.2004.245772

Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

K. H. Cho, S. H. Son, H. K. Kim, Y. C. Jung, B. Naser, J. F. Lin, S. W. Hwang, D. Ahn, J. P. Bird, B. G. Park

School of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2004
Publisher	The Japan Society of Applied Physics
Pages	158-159
Number of pages	2
ISBN (Print)	4990247205, 9784990247201
DOIs	https://doi.org/10.1109/imnc.2004.245772
State	Published - 2004
Event	2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan Duration: 26 Oct 2004 → 29 Oct 2004

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference	2004 International Microprocesses and Nanotechnology Conference
Country/Territory	Japan
City	Osaka
Period	26/10/04 → 29/10/04

Access to Document

10.1109/imnc.2004.245772

Cite this

Cho, K. H., Son, S. H., Kim, H. K., Jung, Y. C., Naser, B., Lin, J. F., Hwang, S. W., Ahn, D., Bird, J. P., & Park, B. G. (2004). Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 158-159). Article 28P-6-36 (Digest of Papers - Microprocesses and Nanotechnology 2004). The Japan Society of Applied Physics. https://doi.org/10.1109/imnc.2004.245772

@inproceedings{05715cd144f64b5da07f291be4ed685b,

title = "Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor",

author = "Cho, {K. H.} and Son, {S. H.} and Kim, {H. K.} and Jung, {Y. C.} and B. Naser and Lin, {J. F.} and Hwang, {S. W.} and D. Ahn and Bird, {J. P.} and Park, {B. G.}",

year = "2004",

doi = "10.1109/imnc.2004.245772",

language = "English",

isbn = "4990247205",

series = "Digest of Papers - Microprocesses and Nanotechnology 2004",

publisher = "The Japan Society of Applied Physics",

pages = "158--159",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2004",

note = "2004 International Microprocesses and Nanotechnology Conference ; Conference date: 26-10-2004 Through 29-10-2004",

}

Cho, KH, Son, SH, Kim, HK, Jung, YC, Naser, B, Lin, JF, Hwang, SW, Ahn, D, Bird, JP & Park, BG 2004, Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. in Digest of Papers - Microprocesses and Nanotechnology 2004., 28P-6-36, Digest of Papers - Microprocesses and Nanotechnology 2004, The Japan Society of Applied Physics, pp. 158-159, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Japan, 26/10/04. https://doi.org/10.1109/imnc.2004.245772

Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. / Cho, K. H.; Son, S. H.; Kim, H. K. et al.
Digest of Papers - Microprocesses and Nanotechnology 2004. The Japan Society of Applied Physics, 2004. p. 158-159 28P-6-36 (Digest of Papers - Microprocesses and Nanotechnology 2004).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

AU - Cho, K. H.

AU - Son, S. H.

AU - Kim, H. K.

AU - Jung, Y. C.

AU - Naser, B.

AU - Lin, J. F.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Bird, J. P.

AU - Park, B. G.

PY - 2004

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U2 - 10.1109/imnc.2004.245772

DO - 10.1109/imnc.2004.245772

M3 - Conference contribution

AN - SCOPUS:23244461056

SN - 4990247205

SN - 9784990247201

T3 - Digest of Papers - Microprocesses and Nanotechnology 2004

SP - 158

EP - 159

BT - Digest of Papers - Microprocesses and Nanotechnology 2004

PB - The Japan Society of Applied Physics

T2 - 2004 International Microprocesses and Nanotechnology Conference

Y2 - 26 October 2004 through 29 October 2004

ER -

Cho KH, Son SH, Kim HK, Jung YC, Naser B, Lin JF et al. Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. In Digest of Papers - Microprocesses and Nanotechnology 2004. The Japan Society of Applied Physics. 2004. p. 158-159. 28P-6-36. (Digest of Papers - Microprocesses and Nanotechnology 2004). doi: 10.1109/imnc.2004.245772

Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

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