Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

K. H. Cho; S. H. Son; H. K. Kim; Y. C. Jung; B. Naser; J. F. Lin; S. W. Hwang; D. Ahn; J. P. Bird; B. G. Park

doi:10.1109/imnc.2004.245772

Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

K. H. Cho
, S. H. Son
, H. K. Kim
, Y. C. Jung
, B. Naser
, J. F. Lin
, S. W. Hwang
, D. Ahn
, J. P. Bird
, B. G. Park

School of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2004
Publisher	The Japan Society of Applied Physics
Pages	158-159
Number of pages	2
ISBN (Print)	4990247205, 9784990247201
DOIs	https://doi.org/10.1109/imnc.2004.245772
State	Published - 2004
Event	2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan Duration: 26 Oct 2004 → 29 Oct 2004

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference	2004 International Microprocesses and Nanotechnology Conference
Country/Territory	Japan
City	Osaka
Period	26/10/04 → 29/10/04

Access to Document

10.1109/imnc.2004.245772

Cite this

Cho, K. H., Son, S. H., Kim, H. K., Jung, Y. C., Naser, B., Lin, J. F., Hwang, S. W., Ahn, D., Bird, J. P., & Park, B. G. (2004). Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 158-159). Article 28P-6-36 (Digest of Papers - Microprocesses and Nanotechnology 2004). The Japan Society of Applied Physics. https://doi.org/10.1109/imnc.2004.245772

@inproceedings{05715cd144f64b5da07f291be4ed685b,

title = "Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor",

author = "Cho, \{K. H.\} and Son, \{S. H.\} and Kim, \{H. K.\} and Jung, \{Y. C.\} and B. Naser and Lin, \{J. F.\} and Hwang, \{S. W.\} and D. Ahn and Bird, \{J. P.\} and Park, \{B. G.\}",

year = "2004",

doi = "10.1109/imnc.2004.245772",

language = "English",

isbn = "4990247205",

series = "Digest of Papers - Microprocesses and Nanotechnology 2004",

publisher = "The Japan Society of Applied Physics",

pages = "158--159",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2004",

note = "2004 International Microprocesses and Nanotechnology Conference ; Conference date: 26-10-2004 Through 29-10-2004",

}

Cho, KH, Son, SH, Kim, HK, Jung, YC, Naser, B, Lin, JF, Hwang, SW, Ahn, D, Bird, JP & Park, BG 2004, Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. in Digest of Papers - Microprocesses and Nanotechnology 2004., 28P-6-36, Digest of Papers - Microprocesses and Nanotechnology 2004, The Japan Society of Applied Physics, pp. 158-159, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Japan, 26/10/04. https://doi.org/10.1109/imnc.2004.245772

Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. / Cho, K. H.; Son, S. H.; Kim, H. K. et al.
Digest of Papers - Microprocesses and Nanotechnology 2004. The Japan Society of Applied Physics, 2004. p. 158-159 28P-6-36 (Digest of Papers - Microprocesses and Nanotechnology 2004).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

AU - Cho, K. H.

AU - Son, S. H.

AU - Kim, H. K.

AU - Jung, Y. C.

AU - Naser, B.

AU - Lin, J. F.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Bird, J. P.

AU - Park, B. G.

PY - 2004

Y1 - 2004

UR - https://www.scopus.com/pages/publications/23244461056

U2 - 10.1109/imnc.2004.245772

DO - 10.1109/imnc.2004.245772

M3 - Conference contribution

AN - SCOPUS:23244461056

SN - 4990247205

SN - 9784990247201

T3 - Digest of Papers - Microprocesses and Nanotechnology 2004

SP - 158

EP - 159

BT - Digest of Papers - Microprocesses and Nanotechnology 2004

PB - The Japan Society of Applied Physics

T2 - 2004 International Microprocesses and Nanotechnology Conference

Y2 - 26 October 2004 through 29 October 2004

ER -

Cho KH, Son SH, Kim HK, Jung YC, Naser B, Lin JF et al. Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor. In Digest of Papers - Microprocesses and Nanotechnology 2004. The Japan Society of Applied Physics. 2004. p. 158-159. 28P-6-36. (Digest of Papers - Microprocesses and Nanotechnology 2004). doi: 10.1109/imnc.2004.245772

Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

Publication series

Conference

Access to Document

Other files and links

Cite this