Gate insulator inhomogeneity in thin film transistors having a polycrystalline silicon layer prepared directly by catalytic chemical vapor deposition at a low temperature
- Hyun Jun Cho
- , Wan Shick Hong
- , Sung Hyun Lee
- , Tae Hwan Kim
- , Kyung Min Lee
- , Kyung Bae Park
- , Ji Sim Jung
- , Jang Yeon Kwon
- University of Seoul
- Samsung
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations