Skip to main navigation
Skip to search
Skip to main content
University of Seoul Home
Search content at University of Seoul
Home
Profiles
Research units
Research output
Press/Media
Gate-modulated optical transitions of tellurium-based field-effect transistors
Junghyun Baek
, Hyun Don Kim
, Hyeongjoon Lim
, Jiwon Jeon
, Yeong Gwang Khim
,
Young Jun Chang
,
Eunjip Choi
Department of Physics
University of Seoul
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Gate-modulated optical transitions of tellurium-based field-effect transistors'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering
Field-Effect Transistor
100%
Optical Transition
100%
Optical Phonon
66%
Silicon Dioxide
66%
Dielectrics
33%
Two Dimensional
33%
Optical Transmission
33%
Dielectric Layer
33%
Carrier Concentration
33%
Semiconducting Material
33%
Physics
Optical Transition
100%
Field Effect Transistor
100%
Phonon
66%
Permittivity
33%
Dielectric Material
33%
Material Science
Field Effect Transistor
100%
Permittivity
33%
Carrier Concentration
33%
Semiconducting Material
33%
Dielectric Material
33%