@inproceedings{a6769c4ed298423199e86f7bf7f2b5a2,
title = "Generation of interface states due to quantum-dot growth in Au/GaAs Schottky Diode structures",
abstract = "We investigated the low-frequency excess electrical noise characteristics of Au/GaAs Shottky diodes with and without self-assembled InAs quantum-dot layer grown by molecular beam epitaxy. The noise intensity shows 1/f behavior and non-quadratic current dependences. The current dependence is explained by the generation of interface states increasing toward the conduction band edge, in the diodes with quantum-dot layer, utilizing the model of random walk of electrons involving interface states. The extracted energy distributions of the interface states for the diodes with and without quantum-dot layer, are presented.",
keywords = "GaAs, InAs, Interface states, Low-frequency noise, Quantum-dots, Random walk, Schottky diodes",
author = "W. Choi and H. Nam and J. Lee and B. Yu and J. Song and H. Yang and A. Chovet",
year = "2005",
month = aug,
day = "25",
doi = "10.1063/1.2036710",
language = "English",
isbn = "0735402671",
series = "AIP Conference Proceedings",
pages = "109--112",
booktitle = "NOISE AND FLUCTUATIONS",
note = "NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 ; Conference date: 19-09-2005 Through 23-09-2005",
}