GIDL analysis of the process variation effect in gate-all-around nanowire FET

Shinkeun Kim; Youngsoo Seo; Jangkyu Lee; Myounggon Kang; Hyungcheol Shin

doi:10.1016/j.sse.2017.10.017

GIDL analysis of the process variation effect in gate-all-around nanowire FET

Shinkeun Kim, Youngsoo Seo, Jangkyu Lee, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (r_nw) and aspect ratio of ellipse-shape respectively and together.

Original language	English
Pages (from-to)	59-63
Number of pages	5
Journal	Solid-State Electronics
Volume	140
DOIs	https://doi.org/10.1016/j.sse.2017.10.017
State	Published - Feb 2018

Keywords

Band-to-band tunneling
GAA
GIDL
Nanowire
PVE
Reliability

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10.1016/j.sse.2017.10.017

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@article{47f9471a2d064a0cb0187420294a492b,

title = "GIDL analysis of the process variation effect in gate-all-around nanowire FET",

abstract = "In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.",

keywords = "Band-to-band tunneling, GAA, GIDL, Nanowire, PVE, Reliability",

author = "Shinkeun Kim and Youngsoo Seo and Jangkyu Lee and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

month = feb,

doi = "10.1016/j.sse.2017.10.017",

language = "English",

volume = "140",

pages = "59--63",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - GIDL analysis of the process variation effect in gate-all-around nanowire FET

AU - Kim, Shinkeun

AU - Seo, Youngsoo

AU - Lee, Jangkyu

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2018/2

Y1 - 2018/2

N2 - In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

AB - In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

KW - Band-to-band tunneling

KW - GAA

KW - GIDL

KW - Nanowire

KW - PVE

KW - Reliability

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DO - 10.1016/j.sse.2017.10.017

M3 - Article

AN - SCOPUS:85032951330

SN - 0038-1101

VL - 140

SP - 59

EP - 63

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

GIDL analysis of the process variation effect in gate-all-around nanowire FET

Abstract

Keywords

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