Graded InGaAs/GaAs strained-layer single quantum well laser

Tae Kyung Yoo; Robert Spencer; William J. Schaff; Lester F. Eastman; Ki Woong Chung; Doyeol Ahn

doi:10.1063/1.109428

Graded InGaAs/GaAs strained-layer single quantum well laser

Tae Kyung Yoo, Robert Spencer, William J. Schaff, Lester F. Eastman, Ki Woong Chung, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A new graded In_xGa_(1-x)As/GaAs/AlGaAs strained-layer single quantum well (QW) laser diode has been proposed and experimentally characterized. Bias-dependencies of valence subbands and maximum optical gains of the InGaAs QW on the external bias are calculated taking into account the effects of the valence band mixing and intraband relaxation. Electron distributions in the conduction bands at threshold bias are also calculated by solving the Poisson and Schrödinger equation self-consistently. By a two-step grading of the InGaAs QW compositions, the higher peak value and smaller full width at half maximum of electron distributions can be obtained around the QW center even at the large external bias. Moreover, the electron-hole spatial separation is substantially reduced in the graded QW. A graded In_xGa_(1-x)As/GaAs strained-layer single QW laser diode with x=0.17-0.33 shows lower threshold current densities by 15% than those of the conventional In_0.25Ga_0.75As laser.

Original language	English
Pages (from-to)	2239-2241
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	18
DOIs	https://doi.org/10.1063/1.109428
State	Published - 1993

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@article{27c7f43181cd405a92d6a75ef75a19bd,

title = "Graded InGaAs/GaAs strained-layer single quantum well laser",

abstract = "A new graded InxGa(1-x)As/GaAs/AlGaAs strained-layer single quantum well (QW) laser diode has been proposed and experimentally characterized. Bias-dependencies of valence subbands and maximum optical gains of the InGaAs QW on the external bias are calculated taking into account the effects of the valence band mixing and intraband relaxation. Electron distributions in the conduction bands at threshold bias are also calculated by solving the Poisson and Schr{\"o}dinger equation self-consistently. By a two-step grading of the InGaAs QW compositions, the higher peak value and smaller full width at half maximum of electron distributions can be obtained around the QW center even at the large external bias. Moreover, the electron-hole spatial separation is substantially reduced in the graded QW. A graded InxGa(1-x)As/GaAs strained-layer single QW laser diode with x=0.17-0.33 shows lower threshold current densities by 15% than those of the conventional In0.25Ga0.75As laser.",

author = "Yoo, {Tae Kyung} and Robert Spencer and Schaff, {William J.} and Eastman, {Lester F.} and Chung, {Ki Woong} and Doyeol Ahn",

year = "1993",

doi = "10.1063/1.109428",

language = "English",

volume = "62",

pages = "2239--2241",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

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TY - JOUR

T1 - Graded InGaAs/GaAs strained-layer single quantum well laser

AU - Yoo, Tae Kyung

AU - Spencer, Robert

AU - Schaff, William J.

AU - Eastman, Lester F.

AU - Chung, Ki Woong

AU - Ahn, Doyeol

PY - 1993

Y1 - 1993

N2 - A new graded InxGa(1-x)As/GaAs/AlGaAs strained-layer single quantum well (QW) laser diode has been proposed and experimentally characterized. Bias-dependencies of valence subbands and maximum optical gains of the InGaAs QW on the external bias are calculated taking into account the effects of the valence band mixing and intraband relaxation. Electron distributions in the conduction bands at threshold bias are also calculated by solving the Poisson and Schrödinger equation self-consistently. By a two-step grading of the InGaAs QW compositions, the higher peak value and smaller full width at half maximum of electron distributions can be obtained around the QW center even at the large external bias. Moreover, the electron-hole spatial separation is substantially reduced in the graded QW. A graded InxGa(1-x)As/GaAs strained-layer single QW laser diode with x=0.17-0.33 shows lower threshold current densities by 15% than those of the conventional In0.25Ga0.75As laser.

AB - A new graded InxGa(1-x)As/GaAs/AlGaAs strained-layer single quantum well (QW) laser diode has been proposed and experimentally characterized. Bias-dependencies of valence subbands and maximum optical gains of the InGaAs QW on the external bias are calculated taking into account the effects of the valence band mixing and intraband relaxation. Electron distributions in the conduction bands at threshold bias are also calculated by solving the Poisson and Schrödinger equation self-consistently. By a two-step grading of the InGaAs QW compositions, the higher peak value and smaller full width at half maximum of electron distributions can be obtained around the QW center even at the large external bias. Moreover, the electron-hole spatial separation is substantially reduced in the graded QW. A graded InxGa(1-x)As/GaAs strained-layer single QW laser diode with x=0.17-0.33 shows lower threshold current densities by 15% than those of the conventional In0.25Ga0.75As laser.

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U2 - 10.1063/1.109428

DO - 10.1063/1.109428

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SN - 0003-6951

VL - 62

SP - 2239

EP - 2241

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Graded InGaAs/GaAs strained-layer single quantum well laser

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