Graphene RF transistors with buried bottom gate

Dong Wook Park; Tzu Hsuan Chang; Solomon Mikael; Jung Hun Seo; Paul F. Nealey; Zhenqiang Ma

doi:10.1109/SiRF.2013.6489440

Graphene RF transistors with buried bottom gate

Dong Wook Park, Tzu Hsuan Chang, Solomon Mikael, Jung Hun Seo, Paul F. Nealey, Zhenqiang Ma

School of Electrical and Computer Engineering

University of Wisconsin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

To improve process induced mobility degradation of graphene, radio frequency (RF) transistors with buried bottom gates have been fabricated and characterized. In this process, graphene is transferred to the top of finished gates and source/drains as almost the very last step of the entire fabrication process. A unit graphene transistor shows the on-current of 130 μA/μm the I_on/I_off ratio of 5.31, and the maximum transconductance of 6.85μS/μm at V_D= 0.1 V. The graphene RF transistor with a channel length of 600 nm shows a maximum oscillation frequency (f_max) of 13 GHz and a cut-off frequency (f_T) of 2 GHz after de-embedding. The higher f_max than f_T is due to less source-drain resistance (R_DS) made by a fully-covered channel region by the buried gate. Because of the higher f_max the proposed device structure can be a promising candidate for graphene RF transistors and RF amplifiers.

Original language	English
Title of host publication	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Pages	84-86
Number of pages	3
DOIs	https://doi.org/10.1109/SiRF.2013.6489440
State	Published - 2013
Event	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States Duration: 21 Jan 2013 → 23 Jan 2013

Publication series

Name	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

Conference

Conference	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
Country/Territory	United States
City	Austin, TX
Period	21/01/13 → 23/01/13

Keywords

Graphene
RF transistor
bottom gate
buried gate
graphene after source/drain

Access to Document

10.1109/SiRF.2013.6489440

Cite this

Park, D. W., Chang, T. H., Mikael, S., Seo, J. H., Nealey, P. F., & Ma, Z. (2013). Graphene RF transistors with buried bottom gate. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013 (pp. 84-86). Article 6489440 (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). https://doi.org/10.1109/SiRF.2013.6489440

@inproceedings{d4c6471f02814573bad715187c470fc7,

title = "Graphene RF transistors with buried bottom gate",

abstract = "To improve process induced mobility degradation of graphene, radio frequency (RF) transistors with buried bottom gates have been fabricated and characterized. In this process, graphene is transferred to the top of finished gates and source/drains as almost the very last step of the entire fabrication process. A unit graphene transistor shows the on-current of 130 μA/μm the Ion/Ioff ratio of 5.31, and the maximum transconductance of 6.85μS/μm at VD= 0.1 V. The graphene RF transistor with a channel length of 600 nm shows a maximum oscillation frequency (fmax) of 13 GHz and a cut-off frequency (fT) of 2 GHz after de-embedding. The higher fmax than fT is due to less source-drain resistance (RDS) made by a fully-covered channel region by the buried gate. Because of the higher fmax the proposed device structure can be a promising candidate for graphene RF transistors and RF amplifiers.",

keywords = "Graphene, RF transistor, bottom gate, buried gate, graphene after source/drain",

author = "Park, {Dong Wook} and Chang, {Tzu Hsuan} and Solomon Mikael and Seo, {Jung Hun} and Nealey, {Paul F.} and Zhenqiang Ma",

year = "2013",

doi = "10.1109/SiRF.2013.6489440",

language = "English",

isbn = "9781467315517",

series = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",

pages = "84--86",

booktitle = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",

note = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 ; Conference date: 21-01-2013 Through 23-01-2013",

}

Park, DW, Chang, TH, Mikael, S, Seo, JH, Nealey, PF & Ma, Z 2013, Graphene RF transistors with buried bottom gate. in 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013., 6489440, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013, pp. 84-86, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013, Austin, TX, United States, 21/01/13. https://doi.org/10.1109/SiRF.2013.6489440

Graphene RF transistors with buried bottom gate. / Park, Dong Wook; Chang, Tzu Hsuan; Mikael, Solomon et al.
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 84-86 6489440 (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Graphene RF transistors with buried bottom gate

AU - Park, Dong Wook

AU - Chang, Tzu Hsuan

AU - Mikael, Solomon

AU - Seo, Jung Hun

AU - Nealey, Paul F.

AU - Ma, Zhenqiang

PY - 2013

Y1 - 2013

N2 - To improve process induced mobility degradation of graphene, radio frequency (RF) transistors with buried bottom gates have been fabricated and characterized. In this process, graphene is transferred to the top of finished gates and source/drains as almost the very last step of the entire fabrication process. A unit graphene transistor shows the on-current of 130 μA/μm the Ion/Ioff ratio of 5.31, and the maximum transconductance of 6.85μS/μm at VD= 0.1 V. The graphene RF transistor with a channel length of 600 nm shows a maximum oscillation frequency (fmax) of 13 GHz and a cut-off frequency (fT) of 2 GHz after de-embedding. The higher fmax than fT is due to less source-drain resistance (RDS) made by a fully-covered channel region by the buried gate. Because of the higher fmax the proposed device structure can be a promising candidate for graphene RF transistors and RF amplifiers.

AB - To improve process induced mobility degradation of graphene, radio frequency (RF) transistors with buried bottom gates have been fabricated and characterized. In this process, graphene is transferred to the top of finished gates and source/drains as almost the very last step of the entire fabrication process. A unit graphene transistor shows the on-current of 130 μA/μm the Ion/Ioff ratio of 5.31, and the maximum transconductance of 6.85μS/μm at VD= 0.1 V. The graphene RF transistor with a channel length of 600 nm shows a maximum oscillation frequency (fmax) of 13 GHz and a cut-off frequency (fT) of 2 GHz after de-embedding. The higher fmax than fT is due to less source-drain resistance (RDS) made by a fully-covered channel region by the buried gate. Because of the higher fmax the proposed device structure can be a promising candidate for graphene RF transistors and RF amplifiers.

KW - Graphene

KW - RF transistor

KW - bottom gate

KW - buried gate

KW - graphene after source/drain

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M3 - Conference contribution

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SN - 9781467315517

T3 - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

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BT - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

T2 - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013

Y2 - 21 January 2013 through 23 January 2013

ER -

Park DW, Chang TH, Mikael S, Seo JH, Nealey PF, Ma Z. Graphene RF transistors with buried bottom gate. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 84-86. 6489440. (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). doi: 10.1109/SiRF.2013.6489440

Graphene RF transistors with buried bottom gate

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