Abstract
The change in microstructure and growth behavior of Mn-doped ZnO films was investigated as a function of Mn content. The films were deposited on Al 2O3 (001) single crystal substrate using pulsed laser deposition. It was found that a small amount of Mn doping improved the atomic alignment in the in-plane and in the out-of-plane directions, and led to the formation of a singly oriented film, by suppressing the hexagon-on-hexagon growth. The superior epitaxial growth of the film with 0.05 at.% Mn content was associated with the microstructure, which showed much larger grains than the other films.
Original language | English |
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Pages (from-to) | 454-459 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 2 |
DOIs | |
State | Published - 15 Jan 2004 |