Hf-doping effect on the thermoelectric transport properties of n-Type Cu0.01Bi2Te2.7Se0.3

Jeong Yun Hwang, Sura Choi, Sang Il Kim, Jae Hong Lim, Soon Mok Choi, Heesun Yang, Hyun Sik Kim, Kyu Hyoung Lee

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3 Scopus citations


Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu0.01Bi2Te2.7Se0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m0 to ~1.24 m0) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu0.01Bi1.925Hf0.075Te2.7Se0.3, which is a ~12% enhancement compared to that of the pristine Cu0.01Bi2Te2.7Se0.3.

Original languageEnglish
Article number4875
JournalApplied Sciences (Switzerland)
Issue number14
StatePublished - Jul 2020


  • BiTe
  • Effective mass
  • Hf-doping
  • Lattice thermal conductivity
  • Thermoelectric


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