@inproceedings{e9aeaa26f0474dac9a058d5d63489464,
title = "High-efficiency BGaN/AlN quantum wells for optoelectronic applications in ultraviolet spectral region",
abstract = "Light emission characteristics of ultraviolet (UV) BGaN/AlN quantum well (QW) structures were investigated using the multiband effective-mass theory and non-Markovian model. The BGaN/AlN QW structures show a much larger light intensity than the conventional AlGaN/AlN QW structures. This is mainly due to the fact that the internal field is significantly reduced by increasing boron contents. The spontaneous emission peak shows a maximum at the critical value (x= 0.04) and begins to decrease when the boron content is further increased. Hence, we expect that BGaN/AlN QW structures with small boron contents can be used as a TE-polarized light source with a high efficiency in UV region.",
keywords = "AlN, BGaN, light-emitting diode, polarization, quantum well",
author = "Park, {Seoung Hwan} and Hong, {Woo Pyo} and Kim, {Jong Jae} and Kim, {Bong Hwan} and Doyeol Ahn",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 ; Conference date: 24-07-2017 Through 28-07-2017",
year = "2017",
month = aug,
day = "11",
doi = "10.1109/NUSOD.2017.8009999",
language = "English",
series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",
publisher = "IEEE Computer Society",
pages = "77--78",
editor = "Morten Willatzen and Joachim Piprek",
booktitle = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017",
address = "United States",
}