High-efficiency InGaN/GaN light-emitting diodes with electron injector

The efficiency in non-polar m-plane InGaN/GaN light-emitting diodes (LEDs) with an electron injector (EI) layer was investigated using multiband effective mass theory. The electron overflow is shown to decrease with the inclusion of an electron-blocking layer. In particular, with the inclusion of the EI layer, the electron overflow is significantly reduced even for a large bias voltage. In the case of the single EI layer, the layer thicker than 13nm would be needed to reduce electron overflows substantially. However, it will be difficult to grow epitaxially high-quality thick single EI layer. Instead, we show that the quantum-well structure with the superlattice-like EI layer is more effective in reducing the ballistic and quasiballistic electron transport across the active region, compared with a thick single EI layer.