High efficient polarization-matched InGaN/MgZnO quantum well structures

Seoung Hwan Park, Doyeol Ahn, Yong Hoon Cho

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The optical properties of InGaN/MgZnO quantum wells (QWs) with zero internal field were investigated by using the non-Markovian model with many-body effects. For a given In composition in a well, a Mg composition y in a barrier was selected to give a zero internal field in a well. The Mg composition y in the barrier to give zero internal field is shown to increase with In composition x in the well. The InGaN/MgZnO QW structure has shorter transition wavelength than the InGaN/GaN QW structure because the internal field is negligible for the former case. Also, in the case of a relatively high In composition (x > 0.15), the InGaN/MgZnO system has a much larger spontaneous emission coefficient than the InGaN/GaN system. This can be explained by the fact that an optical matrix element is largely enhanced due to disappearance of the internal field.

Original languageEnglish
Article number6111442
Pages (from-to)494-496
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
StatePublished - 2012


  • GaN
  • InGaN
  • Light-emitting diode
  • MgZnO
  • ZnO


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