High-intensity terahertz pulses at 1-kHz repetition rate

E. Budiarto, J. Margolies, S. Jeong, J. Son, J. Bokor

Research output: Contribution to journalArticlepeer-review

134 Scopus citations

Abstract

We report the generation of terahertz pulses with 0.4-μJ pulse energy at 1-kHz repetition rate using a large-aperture GaAs photoconductor with 3-cm gap aluminum electrodes, biased at voltages up to 45 kV. The terahertz output energy saturates at a laser fluence of 40 μJ/cm2 at low-bias fields, while no clear saturation point was observed at high-bias fields. The output was found to be dependent on the repetition rate: at high fluences, pulse energy at 1 kHz is higher than that at 100 Hz by as much as 60%. A study of the behavior of the terahertz pulse energy and pulsewidth as a function of the pulsewidth of the laser excitation was conducted and compared with theoretical predictions. Propagation properties of the terahertz beam were also characterized, leading to a focal spot size as small as 800 μm at the focus of a 2.5-in focal length parabolic mirror.

Original languageEnglish
Pages (from-to)1839-1846
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume32
Issue number10
DOIs
StatePublished - Oct 1996

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