Abstract
We report the generation of terahertz pulses with 0.4-μJ pulse energy at 1-kHz repetition rate using a large-aperture GaAs photoconductor with 3-cm gap aluminum electrodes, biased at voltages up to 45 kV. The terahertz output energy saturates at a laser fluence of 40 μJ/cm2 at low-bias fields, while no clear saturation point was observed at high-bias fields. The output was found to be dependent on the repetition rate: at high fluences, pulse energy at 1 kHz is higher than that at 100 Hz by as much as 60%. A study of the behavior of the terahertz pulse energy and pulsewidth as a function of the pulsewidth of the laser excitation was conducted and compared with theoretical predictions. Propagation properties of the terahertz beam were also characterized, leading to a focal spot size as small as 800 μm at the focus of a 2.5-in focal length parabolic mirror.
Original language | English |
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Pages (from-to) | 1839-1846 |
Number of pages | 8 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 32 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1996 |