High mobility solution-processed hybrid light emitting transistors

Bright Walker; Mujeeb Ullah; Gil Jo Chae; Paul L. Burn; Shinuk Cho; Jin Young Kim; Ebinazar B. Namdas; Jung Hwa Seo

doi:10.1063/1.4900933

High mobility solution-processed hybrid light emitting transistors

Bright Walker, Mujeeb Ullah, Gil Jo Chae, Paul L. Burn, Shinuk Cho, Jin Young Kim, Ebinazar B. Namdas, Jung Hwa Seo

Department of Physics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm²/V s, current on/off ratios of >10⁷, and external quantum efficiency of 10^-2% at 2100 cd/m². These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

Original language	English
Article number	183302
Journal	Applied Physics Letters
Volume	105
Issue number	18
DOIs	https://doi.org/10.1063/1.4900933
State	Published - 3 Nov 2014

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title = "High mobility solution-processed hybrid light emitting transistors",

abstract = "We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm2/V s, current on/off ratios of >107, and external quantum efficiency of 10-2% at 2100 cd/m2. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.",

author = "Bright Walker and Mujeeb Ullah and Chae, {Gil Jo} and Burn, {Paul L.} and Shinuk Cho and Kim, {Jin Young} and Namdas, {Ebinazar B.} and Seo, {Jung Hwa}",

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AU - Walker, Bright

AU - Ullah, Mujeeb

AU - Chae, Gil Jo

AU - Burn, Paul L.

AU - Cho, Shinuk

AU - Kim, Jin Young

AU - Namdas, Ebinazar B.

AU - Seo, Jung Hwa

PY - 2014/11/3

Y1 - 2014/11/3

N2 - We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm2/V s, current on/off ratios of >107, and external quantum efficiency of 10-2% at 2100 cd/m2. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

AB - We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm2/V s, current on/off ratios of >107, and external quantum efficiency of 10-2% at 2100 cd/m2. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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High mobility solution-processed hybrid light emitting transistors

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