High optical polarization ratio of semipolar (202̄1̄)-oriented InGaN/GaN quantum wells and comparison with experiment

Seoung Hwan Park, Doyeol Ahn

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Abstract

Optical anisotropy properties of (202̄1̄)-plane wurtzite (WZ) InGaN/GaN quantum well (QW) structures were investigated using the multiband effective-mass theory and the non-Markovian model with many-body effects. The results were compared with those of non-polar (112̄0) a-plane InGaN/GaN QW structures. The In content dependence of the transition wavelength of the (202̄1̄)-plane QW structure is found to be very similar to that of (112̄0)-plane QW structure. The (202̄1̄)-plane shows slightly smaller y ′-polarized spontaneous emission coefficient than that with the (112̄0)-plane. On the other hand, in the case of x ′-polarization, the (202̄1̄)-plane QW structure has a larger spontaneous emission coefficient than the (112̄0)-plane QW structure. The in-plane optical anisotropies of both QW structures are shown to increase gradually with increasing transition wavelength or In content. The optical anisotropy of (202̄1̄)-oriented QW structure is ranging from 0.50 at 400 nm to 0.75 at 530 nm, which is in good agreement with the experimental result.

Original languageEnglish
Article number093106
JournalJournal of Applied Physics
Volume112
Issue number9
DOIs
StatePublished - 1 Nov 2012

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