Abstract
Optical anisotropy properties of (202̄1̄)-plane wurtzite (WZ) InGaN/GaN quantum well (QW) structures were investigated using the multiband effective-mass theory and the non-Markovian model with many-body effects. The results were compared with those of non-polar (112̄0) a-plane InGaN/GaN QW structures. The In content dependence of the transition wavelength of the (202̄1̄)-plane QW structure is found to be very similar to that of (112̄0)-plane QW structure. The (202̄1̄)-plane shows slightly smaller y ′-polarized spontaneous emission coefficient than that with the (112̄0)-plane. On the other hand, in the case of x ′-polarization, the (202̄1̄)-plane QW structure has a larger spontaneous emission coefficient than the (112̄0)-plane QW structure. The in-plane optical anisotropies of both QW structures are shown to increase gradually with increasing transition wavelength or In content. The optical anisotropy of (202̄1̄)-oriented QW structure is ranging from 0.50 at 400 nm to 0.75 at 530 nm, which is in good agreement with the experimental result.
Original language | English |
---|---|
Article number | 093106 |
Journal | Journal of Applied Physics |
Volume | 112 |
Issue number | 9 |
DOIs | |
State | Published - 1 Nov 2012 |