High-performance ambipolar transistors and inverters from an ultralow bandgap polymer

Jian Fan; Jonathan D. Yuen; Mingfeng Wang; Jason Seifter; Jung Hwa Seo; Ali Reza Mohebbi; Dante Zakhidov; Alan Heeger; Fred Wudl

doi:10.1002/adma.201103836

High-performance ambipolar transistors and inverters from an ultralow bandgap polymer

Jian Fan
, Jonathan D. Yuen
, Mingfeng Wang
, Jason Seifter
, Jung Hwa Seo
, Ali Reza Mohebbi
, Dante Zakhidov
, Alan Heeger
, Fred Wudl

Department of Physics

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

High mobility ambipolor organic thin-film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm ² V ^-1 s ^-1 and 0.7 cm ² V ^-1 s ^-1, respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35.

Original language	English
Pages (from-to)	2186-2190
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	16
DOIs	https://doi.org/10.1002/adma.201103836
State	Published - 24 Apr 2012

Keywords

charge transport
conjugated polymers
polymeric materials
thin films

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10.1002/adma.201103836

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abstract = "High mobility ambipolor organic thin-film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm 2 V -1 s -1 and 0.7 cm 2 V -1 s -1, respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35.",

keywords = "charge transport, conjugated polymers, polymeric materials, thin films",

author = "Jian Fan and Yuen, \{Jonathan D.\} and Mingfeng Wang and Jason Seifter and Seo, \{Jung Hwa\} and Mohebbi, \{Ali Reza\} and Dante Zakhidov and Alan Heeger and Fred Wudl",

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AU - Fan, Jian

AU - Yuen, Jonathan D.

AU - Wang, Mingfeng

AU - Seifter, Jason

AU - Seo, Jung Hwa

AU - Mohebbi, Ali Reza

AU - Zakhidov, Dante

AU - Heeger, Alan

AU - Wudl, Fred

PY - 2012/4/24

Y1 - 2012/4/24

N2 - High mobility ambipolor organic thin-film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm 2 V -1 s -1 and 0.7 cm 2 V -1 s -1, respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35.

AB - High mobility ambipolor organic thin-film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm 2 V -1 s -1 and 0.7 cm 2 V -1 s -1, respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35.

KW - charge transport

KW - conjugated polymers

KW - polymeric materials

KW - thin films

UR - https://www.scopus.com/pages/publications/84860348828

U2 - 10.1002/adma.201103836

DO - 10.1002/adma.201103836

M3 - Article

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AN - SCOPUS:84860348828

SN - 0935-9648

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SP - 2186

EP - 2190

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

High-performance ambipolar transistors and inverters from an ultralow bandgap polymer

Abstract

Keywords

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