High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

Yong Young Noh; Dong Yu Kim; Yuji Yoshida; Kiyoshi Yase; Byung Jun Jung; Eunhee Lim; Hong Ku Shim

doi:10.1063/1.1856144

High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

Yong Young Noh, Dong Yu Kim, Yuji Yoshida, Kiyoshi Yase, Byung Jun Jung, Eunhee Lim, Hong Ku Shim

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (I_ph/I _dark) in BPTT OPTs were 82 A/W and 2.0 × 10⁵ under 380 nm UV light with 1.55 mW/cm², respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations.

Original language	English
Article number	043501
Pages (from-to)	043501-1-043501-3
Journal	Applied Physics Letters
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.1856144
State	Published - 2005

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title = "High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer",

abstract = "We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (Iph/I dark) in BPTT OPTs were 82 A/W and 2.0 × 105 under 380 nm UV light with 1.55 mW/cm2, respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations.",

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T1 - High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

AU - Noh, Yong Young

AU - Kim, Dong Yu

AU - Yoshida, Yuji

AU - Yase, Kiyoshi

AU - Jung, Byung Jun

AU - Lim, Eunhee

AU - Shim, Hong Ku

PY - 2005

Y1 - 2005

N2 - We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (Iph/I dark) in BPTT OPTs were 82 A/W and 2.0 × 105 under 380 nm UV light with 1.55 mW/cm2, respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations.

AB - We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (Iph/I dark) in BPTT OPTs were 82 A/W and 2.0 × 105 under 380 nm UV light with 1.55 mW/cm2, respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations.

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High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

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