High power terahertz radiation at 1kHz repetition rate

E. Budiarto, S. Jeong, J. Son, J. Margolies, J. Boker

Research output: Contribution to journalConference articlepeer-review


A high-power terahertz (THz) transmitter operating at 1-kHz repetition rate is reported. This kHz repetition rate gives a high signal-to-noise ratio, which is essential for quantitative study of high-field semiconductor physics. The transmitter is an undoped GaAs wafer with aluminum electrodes separated by a 3-cm gap. The bias to the antenna is provided by a high voltage pulse generator producing 2-μs pulses with a peak voltage of up to 40 kV. The THz antenna is illuminated at normal incidence by 150-fs, 800-nm pulses from a Clark-MXR Ti:sapphire regenerative amplifier system running at 1 kHz.

Original languageEnglish
Pages (from-to)220-221
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1995
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: 30 Oct 19952 Nov 1995


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