Abstract
A high-power terahertz (THz) transmitter operating at 1-kHz repetition rate is reported. This kHz repetition rate gives a high signal-to-noise ratio, which is essential for quantitative study of high-field semiconductor physics. The transmitter is an undoped GaAs wafer with aluminum electrodes separated by a 3-cm gap. The bias to the antenna is provided by a high voltage pulse generator producing 2-μs pulses with a peak voltage of up to 40 kV. The THz antenna is illuminated at normal incidence by 150-fs, 800-nm pulses from a Clark-MXR Ti:sapphire regenerative amplifier system running at 1 kHz.
| Original language | English |
|---|---|
| Pages (from-to) | 220-221 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA Duration: 30 Oct 1995 → 2 Nov 1995 |