TY - JOUR
T1 - High transmittance SiC membrane prepared by electron cyclotron resonance plasma chemical vapor deposition in combination with rapid thermal annealing
AU - Lee, Seung Yoon
AU - Song, Ki Chang
AU - Kim, Jiyoung
AU - Son, Joo Hiuk
AU - Ahn, Jinho
PY - 1998
Y1 - 1998
N2 - A thin film of SiC was deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method for an X-ray mask membrane, and its physical and chemical properties were characterized. The source gases were SiH4, CH4, and Ar, and the stoichiometric film composition was achieved at a source gas ratio (SiH4/CH4) of 0.4, microwave power of 500 W, and deposition temperature of 600°C. At these deposition conditions, the as-deposited film had compressive residual stress of about 100 MPa. According to the transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses, the microstructure of this SiC was an amorphous matrix embedded with nano-sized crystalline particles. The compressive residual stress could be changed to tensile stress via rapid thermal annealing in N2 atmosphere without any notable structural changes. The membrane made of this SiC film had elastic modulus of 300 GPa, and showed optical transmittance of 85% at 633 nm wavelength.
AB - A thin film of SiC was deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method for an X-ray mask membrane, and its physical and chemical properties were characterized. The source gases were SiH4, CH4, and Ar, and the stoichiometric film composition was achieved at a source gas ratio (SiH4/CH4) of 0.4, microwave power of 500 W, and deposition temperature of 600°C. At these deposition conditions, the as-deposited film had compressive residual stress of about 100 MPa. According to the transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses, the microstructure of this SiC was an amorphous matrix embedded with nano-sized crystalline particles. The compressive residual stress could be changed to tensile stress via rapid thermal annealing in N2 atmosphere without any notable structural changes. The membrane made of this SiC film had elastic modulus of 300 GPa, and showed optical transmittance of 85% at 633 nm wavelength.
KW - Electron cyclotron resonance plasma chemical vapor deposition
KW - Optical transmittance
KW - Residual stress
KW - Silicon carbide
KW - X-ray mask membrane
UR - http://www.scopus.com/inward/record.url?scp=0010610965&partnerID=8YFLogxK
U2 - 10.1143/jjap.37.6841
DO - 10.1143/jjap.37.6841
M3 - Article
AN - SCOPUS:0010610965
SN - 0021-4922
VL - 37
SP - 6841
EP - 6844
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 12 B
ER -