High transmittance TFT-LCD panels using low-k CVD films

Wan Shick Hong; Kwan Wook Jung; Joon Hoo Choi; Byung Keun Hwang; Kyuha Chung

doi:10.1109/LED.2004.828957

High transmittance TFT-LCD panels using low-k CVD films

Wan Shick Hong, Kwan Wook Jung, Joon Hoo Choi, Byung Keun Hwang, Kyuha Chung

Department of Materials Science and Engineering

Research output: Contribution to journal › Letter › peer-review

18 Scopus citations

Abstract

Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-k dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using a conventional plasma-enhanced chemical vapor deposition (PECVD) and plasma-assisted etching techniques. The interface between the a-Si channel and the overlaying passivation was modified by appropriate plasma treatment prior to the low-k deposition. TFTs having the a-Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFTs. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as crosstalk.

Original language	English
Pages (from-to)	381-383
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	6
DOIs	https://doi.org/10.1109/LED.2004.828957
State	Published - Jun 2004

Keywords

Aperture ratio
Dielectric constant
Passivation
TFT-LCD

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10.1109/LED.2004.828957

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title = "High transmittance TFT-LCD panels using low-k CVD films",

abstract = "Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-k dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using a conventional plasma-enhanced chemical vapor deposition (PECVD) and plasma-assisted etching techniques. The interface between the a-Si channel and the overlaying passivation was modified by appropriate plasma treatment prior to the low-k deposition. TFTs having the a-Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFTs. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as crosstalk.",

keywords = "Aperture ratio, Dielectric constant, Passivation, TFT-LCD",

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AU - Hong, Wan Shick

AU - Jung, Kwan Wook

AU - Choi, Joon Hoo

AU - Hwang, Byung Keun

AU - Chung, Kyuha

PY - 2004/6

Y1 - 2004/6

N2 - Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-k dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using a conventional plasma-enhanced chemical vapor deposition (PECVD) and plasma-assisted etching techniques. The interface between the a-Si channel and the overlaying passivation was modified by appropriate plasma treatment prior to the low-k deposition. TFTs having the a-Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFTs. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as crosstalk.

AB - Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-k dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using a conventional plasma-enhanced chemical vapor deposition (PECVD) and plasma-assisted etching techniques. The interface between the a-Si channel and the overlaying passivation was modified by appropriate plasma treatment prior to the low-k deposition. TFTs having the a-Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFTs. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as crosstalk.

KW - Aperture ratio

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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High transmittance TFT-LCD panels using low-k CVD films

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Keywords

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