Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: Experiment and simulation

Hyeok Kim; Dong Seok Song; Seong Min Kim; Nicolas Battaglini; Philippe Lang; Gilles Horowitz; Do Kyung Kim; In Man Kang; Jin Hyuk Bae

doi:10.1049/mnl.2014.0422

Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: Experiment and simulation

Hyeok Kim, Dong Seok Song, Seong Min Kim, Nicolas Battaglini, Philippe Lang, Gilles Horowitz, Do Kyung Kim, In Man Kang, Jin Hyuk Bae

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The gap-type diode is a basic component of organic field-effect transistors. In the critical voltage range above 10 V, the gap-type diode works in the same way as a sandwich-type diode adapted for organic light-emitting diodes and organic photovoltaic cells. However, the gap-type diode is rarely studied, and compact modelling is not often found in previous reports that deal with this type of an organic diode. Enhanced bulk transport is exhibited using the one-pot treatment of self-assembled monolayers (SAMs) for an SiO₂ surface and an Au contact metal in the gap-type organic diode. Charge-injection improvement via the SAM treatment on Au induces higher bulk transport. This phenomenon is analysed mainly through compact modelling.

Original language	English
Pages (from-to)	887-890
Number of pages	4
Journal	Micro and Nano Letters
Volume	9
Issue number	12
DOIs	https://doi.org/10.1049/mnl.2014.0422
State	Published - 1 Dec 2014

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title = "Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: Experiment and simulation",

abstract = "The gap-type diode is a basic component of organic field-effect transistors. In the critical voltage range above 10 V, the gap-type diode works in the same way as a sandwich-type diode adapted for organic light-emitting diodes and organic photovoltaic cells. However, the gap-type diode is rarely studied, and compact modelling is not often found in previous reports that deal with this type of an organic diode. Enhanced bulk transport is exhibited using the one-pot treatment of self-assembled monolayers (SAMs) for an SiO2 surface and an Au contact metal in the gap-type organic diode. Charge-injection improvement via the SAM treatment on Au induces higher bulk transport. This phenomenon is analysed mainly through compact modelling.",

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AU - Kim, Hyeok

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AU - Battaglini, Nicolas

AU - Lang, Philippe

AU - Horowitz, Gilles

AU - Kim, Do Kyung

AU - Kang, In Man

AU - Bae, Jin Hyuk

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AB - The gap-type diode is a basic component of organic field-effect transistors. In the critical voltage range above 10 V, the gap-type diode works in the same way as a sandwich-type diode adapted for organic light-emitting diodes and organic photovoltaic cells. However, the gap-type diode is rarely studied, and compact modelling is not often found in previous reports that deal with this type of an organic diode. Enhanced bulk transport is exhibited using the one-pot treatment of self-assembled monolayers (SAMs) for an SiO2 surface and an Au contact metal in the gap-type organic diode. Charge-injection improvement via the SAM treatment on Au induces higher bulk transport. This phenomenon is analysed mainly through compact modelling.

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Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: Experiment and simulation

Abstract

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