Highly p -doped epitaxial graphene obtained by fluorine intercalation

Andrew L. Walter; Ki Joon Jeon; Aaron Bostwick; Florian Speck; Markus Ostler; Thomas Seyller; Luca Moreschini; Yong Su Kim; Young Jun Chang; Karsten Horn; Eli Rotenberg

doi:10.1063/1.3586256

Highly p -doped epitaxial graphene obtained by fluorine intercalation

Andrew L. Walter, Ki Joon Jeon, Aaron Bostwick, Florian Speck, Markus Ostler, Thomas Seyller, Luca Moreschini, Yong Su Kim, Young Jun Chang, Karsten Horn, Eli Rotenberg

Department of Physics

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Abstract

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 10¹³ cm^-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point E_D.

Original language	English
Article number	184102
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3586256
State	Published - 2 May 2011

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abstract = "We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.",

author = "Walter, {Andrew L.} and Jeon, {Ki Joon} and Aaron Bostwick and Florian Speck and Markus Ostler and Thomas Seyller and Luca Moreschini and Kim, {Yong Su} and Chang, {Young Jun} and Karsten Horn and Eli Rotenberg",

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T1 - Highly p -doped epitaxial graphene obtained by fluorine intercalation

AU - Walter, Andrew L.

AU - Jeon, Ki Joon

AU - Bostwick, Aaron

AU - Speck, Florian

AU - Ostler, Markus

AU - Seyller, Thomas

AU - Moreschini, Luca

AU - Kim, Yong Su

AU - Chang, Young Jun

AU - Horn, Karsten

AU - Rotenberg, Eli

PY - 2011/5/2

Y1 - 2011/5/2

N2 - We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

AB - We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

UR - http://www.scopus.com/inward/record.url?scp=79957532084&partnerID=8YFLogxK

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 184102

ER -

Highly p -doped epitaxial graphene obtained by fluorine intercalation

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