Highly p -doped epitaxial graphene obtained by fluorine intercalation

Andrew L. Walter, Ki Joon Jeon, Aaron Bostwick, Florian Speck, Markus Ostler, Thomas Seyller, Luca Moreschini, Yong Su Kim, Young Jun Chang, Karsten Horn, Eli Rotenberg

Research output: Contribution to journalArticlepeer-review

141 Scopus citations


We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

Original languageEnglish
Article number184102
JournalApplied Physics Letters
Issue number18
StatePublished - 2 May 2011


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