Highly p -doped epitaxial graphene obtained by fluorine intercalation

Andrew L. Walter; Ki Joon Jeon; Aaron Bostwick; Florian Speck; Markus Ostler; Thomas Seyller; Luca Moreschini; Yong Su Kim; Young Jun Chang; Karsten Horn; Eli Rotenberg

doi:10.1063/1.3586256

Highly p -doped epitaxial graphene obtained by fluorine intercalation

Andrew L. Walter
, Ki Joon Jeon
, Aaron Bostwick
, Florian Speck
, Markus Ostler
, Thomas Seyller
, Luca Moreschini
, Yong Su Kim
, Young Jun Chang
, Karsten Horn
, Eli Rotenberg

Department of Physics

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 10¹³ cm^-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point E_D.

Original language	English
Article number	184102
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3586256
State	Published - 2 May 2011

Access to Document

10.1063/1.3586256

Cite this

@article{4dfc306b2d7e4f07ae152dc875b0827e,

title = "Highly p -doped epitaxial graphene obtained by fluorine intercalation",

abstract = "We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.",

author = "Walter, \{Andrew L.\} and Jeon, \{Ki Joon\} and Aaron Bostwick and Florian Speck and Markus Ostler and Thomas Seyller and Luca Moreschini and Kim, \{Yong Su\} and Chang, \{Young Jun\} and Karsten Horn and Eli Rotenberg",

year = "2011",

month = may,

day = "2",

doi = "10.1063/1.3586256",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Highly p -doped epitaxial graphene obtained by fluorine intercalation

AU - Walter, Andrew L.

AU - Jeon, Ki Joon

AU - Bostwick, Aaron

AU - Speck, Florian

AU - Ostler, Markus

AU - Seyller, Thomas

AU - Moreschini, Luca

AU - Kim, Yong Su

AU - Chang, Young Jun

AU - Horn, Karsten

AU - Rotenberg, Eli

PY - 2011/5/2

Y1 - 2011/5/2

N2 - We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

AB - We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p≈4.5× 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

UR - https://www.scopus.com/pages/publications/79957532084

U2 - 10.1063/1.3586256

DO - 10.1063/1.3586256

M3 - Article

AN - SCOPUS:79957532084

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 184102

ER -

Highly p -doped epitaxial graphene obtained by fluorine intercalation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this