Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method

Hyeonwoo Shin, Jeongkyun Roh, Jiyoung Song, Heebum Roh, Chan Mo Kang, Taesoo Lee, Gunbaek Park, Kunsik An, Jun Young Kim, Hyoseok Kim, Jeonghun Kwak, Changhee Lee, Hyeok Kim

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14 Scopus citations

Abstract

In this work, operationally and mechanically stable organic field-effect transistors (OFETs) are demonstrated on aramid fiber-based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography-inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub-nanometer-scale surface roughness. Owing to the sub-nanometer-scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field-effect mobility (0.25 cm 2 V −1 s −1 ) with a high current on-to-off ratio (>10 7 ), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias-stress-induced threshold voltage shift (∆V TH ≈ 4.27 V under an excessive gate bias stress of 1.7 MV cm −1 for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field-effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications.

Original languageEnglish
Article number1801731
JournalAdvanced Materials Interfaces
Volume6
Issue number8
DOIs
StatePublished - 23 Apr 2019

Keywords

  • aramid paper
  • flexible electronics
  • organic field-effect transistors
  • paper electronics
  • surface planarization

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