Hole injection in n-type organic semiconductors by tuning metal work function with functional self-assembled monolayers

Dong Seok Song, Jeongkyun Roh, Changhee Lee, Dae Young Shin, Jin Hyuk Bae, Hyeok Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We describe hole-injection enhancement in n-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT) lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBTtreated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V whereas it was 27 V for the device with the pristine Ag electrode.

Original languageEnglish
Pages (from-to)3378-3381
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number5
DOIs
StatePublished - 2017

Keywords

  • Hole Injection
  • N-Type Organic Semiconductors
  • Organic Diode
  • Self-Assembled Monolayers
  • Work Function Tuning

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