Abstract
We describe hole-injection enhancement in n-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT) lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBTtreated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V whereas it was 27 V for the device with the pristine Ag electrode.
Original language | English |
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Pages (from-to) | 3378-3381 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 17 |
Issue number | 5 |
DOIs | |
State | Published - 2017 |
Keywords
- Hole Injection
- N-Type Organic Semiconductors
- Organic Diode
- Self-Assembled Monolayers
- Work Function Tuning