Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors

S. H. Son; M. G. Kang; S. W. Hwang; J. I. Lee; Y. J. Park; Y. S. Yu; D. Ahn

doi:10.1016/j.physe.2007.10.096

Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors

S. H. Son, M. G. Kang, S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report the fabrication and characterization of a planar-type resonant tunneling device-field effect transistor (RTD-FET) hybrid circuit. Our hybrid circuit utilizes in-plane-type gates, which can control the potential of the quantum RTD quantum dot (QD) and FET channel. Transport measurements through the fabricated RTD-FET hybrid circuit exhibited the shift of the negative differential resistance peaks both as functions of the RTD gate and the FET gate. The slope of the current contour plot showed that the coupling capacitance of the FET gate to the QD is 1/20 of that of the FET gate. Our hybrid circuit successfully showed multi-valued inverter characteristics.

Original language	English
Pages (from-to)	2160-2162
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.10.096
State	Published - Apr 2008

Keywords

Hybrid circuit
In-plane gate
Negative differential resistance
Quantum dot

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10.1016/j.physe.2007.10.096

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title = "Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors",

abstract = "We report the fabrication and characterization of a planar-type resonant tunneling device-field effect transistor (RTD-FET) hybrid circuit. Our hybrid circuit utilizes in-plane-type gates, which can control the potential of the quantum RTD quantum dot (QD) and FET channel. Transport measurements through the fabricated RTD-FET hybrid circuit exhibited the shift of the negative differential resistance peaks both as functions of the RTD gate and the FET gate. The slope of the current contour plot showed that the coupling capacitance of the FET gate to the QD is 1/20 of that of the FET gate. Our hybrid circuit successfully showed multi-valued inverter characteristics.",

keywords = "Hybrid circuit, In-plane gate, Negative differential resistance, Quantum dot",

author = "Son, {S. H.} and Kang, {M. G.} and Hwang, {S. W.} and Lee, {J. I.} and Park, {Y. J.} and Yu, {Y. S.} and D. Ahn",

year = "2008",

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language = "English",

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TY - JOUR

T1 - Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors

AU - Son, S. H.

AU - Kang, M. G.

AU - Hwang, S. W.

AU - Lee, J. I.

AU - Park, Y. J.

AU - Yu, Y. S.

AU - Ahn, D.

PY - 2008/4

Y1 - 2008/4

N2 - We report the fabrication and characterization of a planar-type resonant tunneling device-field effect transistor (RTD-FET) hybrid circuit. Our hybrid circuit utilizes in-plane-type gates, which can control the potential of the quantum RTD quantum dot (QD) and FET channel. Transport measurements through the fabricated RTD-FET hybrid circuit exhibited the shift of the negative differential resistance peaks both as functions of the RTD gate and the FET gate. The slope of the current contour plot showed that the coupling capacitance of the FET gate to the QD is 1/20 of that of the FET gate. Our hybrid circuit successfully showed multi-valued inverter characteristics.

AB - We report the fabrication and characterization of a planar-type resonant tunneling device-field effect transistor (RTD-FET) hybrid circuit. Our hybrid circuit utilizes in-plane-type gates, which can control the potential of the quantum RTD quantum dot (QD) and FET channel. Transport measurements through the fabricated RTD-FET hybrid circuit exhibited the shift of the negative differential resistance peaks both as functions of the RTD gate and the FET gate. The slope of the current contour plot showed that the coupling capacitance of the FET gate to the QD is 1/20 of that of the FET gate. Our hybrid circuit successfully showed multi-valued inverter characteristics.

KW - Hybrid circuit

KW - In-plane gate

KW - Negative differential resistance

KW - Quantum dot

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 6

ER -

Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors

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Keywords

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