Hybrid ZnON–Organic Light Emitting Transistors with Low Threshold Voltage <5 V

Yu Jung Park, Ae Ran Song, Bright Walker, Jung Hwa Seo, Kwun Bum Chung

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The electrical and optical properties of inorganic–organic hybrid light emitting transistors (HLETs) are investigated, which are fabricated using the n-type semiconductor zinc-oxynitride (ZnON) as an electron transporting layer and the poly(p-phenylene vinylene)-based copolymer, Super Yellow (SY), as the light emitting layer. Additionally, the influence of various source (S)–drain (D) electrodes (Al, Ag, and Au) with different work functions (WFs) (4.1, 4.6, and 5.1 eV, respectively) on the performance of HLETs is studied. In order to increase the rate of hole injection from the metal electrodes and increase hole accumulation at the emissive layer, the use of a molybdenum oxide (MoO x ) interlayer is also investigated. As a result, optimized devices using MoO x /Au hole injecting electrodes yield high brightness of up to 3.04 × 10 4 cd∙m −2 at a low threshold voltage of 4.79 V. This study provides valuable information about the role of the WF of S–D electrodes in HLETs, which may be exploited to improve the device performance of optoelectronic devices in the future.

Original languageEnglish
Article number1801290
JournalAdvanced Optical Materials
Volume7
Issue number7
DOIs
StatePublished - 4 Apr 2019

Keywords

  • light emitting transistors
  • low threshold voltage
  • super yellow
  • work function
  • zinc-oxynitride

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