Hydrocarbon-associated Si(001) surface structure: CAICISS

J. H. Seo; C. N. Whang; K. H. Yoo; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1117/12.614415

Hydrocarbon-associated Si(001) surface structure: CAICISS

J. H. Seo, C. N. Whang, K. H. Yoo, S. S. Kim, D. S. Choi, K. H. Chae

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The surface structure of C₂H₄ on Si(001) has been investigated by coaxial impact collision ion scattering spectroscopy (CAICISS). To determine the adsorption structure of the C₂H₄ molecules definitely, the computer simulation with the two-dimensional trajectory count method has been applied to the recently proposed most possible two single molecular adsorption configurations (di-σ on-top and di-σ end-bridge). The CAICISS spectra and simulation results show that the di-σ on-top structure is better fitted with the experimental results rather than the di-σ end-bridge.

Original language	English
Article number	592915
Pages (from-to)	1-9
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5929
DOIs	https://doi.org/10.1117/12.614415
State	Published - 2005
Event	Physical Chemistry of Interfaces and Nanomaterials IV - San Diego, CA, United States Duration: 2 Aug 2005 → 4 Aug 2005

Keywords

Ethylene
Hydrocarbon
Low energy ion scattering (LEIS)
Silicon
Simulation

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10.1117/12.614415

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title = "Hydrocarbon-associated Si(001) surface structure: CAICISS",

abstract = "The surface structure of C2H4 on Si(001) has been investigated by coaxial impact collision ion scattering spectroscopy (CAICISS). To determine the adsorption structure of the C2H4 molecules definitely, the computer simulation with the two-dimensional trajectory count method has been applied to the recently proposed most possible two single molecular adsorption configurations (di-σ on-top and di-σ end-bridge). The CAICISS spectra and simulation results show that the di-σ on-top structure is better fitted with the experimental results rather than the di-σ end-bridge.",

keywords = "Ethylene, Hydrocarbon, Low energy ion scattering (LEIS), Silicon, Simulation",

author = "Seo, {J. H.} and Whang, {C. N.} and Yoo, {K. H.} and Kim, {S. S.} and Choi, {D. S.} and Chae, {K. H.}",

year = "2005",

doi = "10.1117/12.614415",

language = "English",

volume = "5929",

pages = "1--9",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physical Chemistry of Interfaces and Nanomaterials IV ; Conference date: 02-08-2005 Through 04-08-2005",

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TY - JOUR

T1 - Hydrocarbon-associated Si(001) surface structure

T2 - Physical Chemistry of Interfaces and Nanomaterials IV

AU - Seo, J. H.

AU - Whang, C. N.

AU - Yoo, K. H.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2005

Y1 - 2005

N2 - The surface structure of C2H4 on Si(001) has been investigated by coaxial impact collision ion scattering spectroscopy (CAICISS). To determine the adsorption structure of the C2H4 molecules definitely, the computer simulation with the two-dimensional trajectory count method has been applied to the recently proposed most possible two single molecular adsorption configurations (di-σ on-top and di-σ end-bridge). The CAICISS spectra and simulation results show that the di-σ on-top structure is better fitted with the experimental results rather than the di-σ end-bridge.

AB - The surface structure of C2H4 on Si(001) has been investigated by coaxial impact collision ion scattering spectroscopy (CAICISS). To determine the adsorption structure of the C2H4 molecules definitely, the computer simulation with the two-dimensional trajectory count method has been applied to the recently proposed most possible two single molecular adsorption configurations (di-σ on-top and di-σ end-bridge). The CAICISS spectra and simulation results show that the di-σ on-top structure is better fitted with the experimental results rather than the di-σ end-bridge.

KW - Ethylene

KW - Hydrocarbon

KW - Low energy ion scattering (LEIS)

KW - Silicon

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=31944448178&partnerID=8YFLogxK

U2 - 10.1117/12.614415

DO - 10.1117/12.614415

M3 - Conference article

AN - SCOPUS:31944448178

SN - 0277-786X

VL - 5929

SP - 1

EP - 9

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 592915

Y2 - 2 August 2005 through 4 August 2005

ER -

Hydrocarbon-associated Si(001) surface structure: CAICISS

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Keywords

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