Abstract
We demonstrate the ferroelectric behavior of PZT films grown on Si(111) substrates by using CeO 2 buffer layer. PZT (90 nm) films were prepared by electron beam assisted vacuum evaporation system and CeO 2 (27 nm) films were prepared by MBE (molecular beam epitaxy). It is found that a hysteresis is not shown in the capacitance-voltage (C-V) characteristics of CeO 2 /Si structures, whereas a hysteresis is obtained in the C-V plot of PZT/CeO 2 /Si structures, which is due to the ferroelectric nature of the PZT film. In addition, it is shown that the leakage current of PZT/CeO 2 /Si is as low as 10 -7 A/cm 2 at 8 V.
Original language | English |
---|---|
Pages (from-to) | 423-428 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 117-118 |
DOIs | |
State | Published - 2 Jun 1997 |
Keywords
- CeO
- Ferroelectric
- MFSFETs
- PZT
- Vacuum evaporation