Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr 0.4 Ti 0.6 O 3 films on Si(111) substrates using CeO 2 buffer layers

Byung Eun Park, Ikuo Sakai, Eisuke Tokumitsu, Hiroshi Ishiwara

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We demonstrate the ferroelectric behavior of PZT films grown on Si(111) substrates by using CeO 2 buffer layer. PZT (90 nm) films were prepared by electron beam assisted vacuum evaporation system and CeO 2 (27 nm) films were prepared by MBE (molecular beam epitaxy). It is found that a hysteresis is not shown in the capacitance-voltage (C-V) characteristics of CeO 2 /Si structures, whereas a hysteresis is obtained in the C-V plot of PZT/CeO 2 /Si structures, which is due to the ferroelectric nature of the PZT film. In addition, it is shown that the leakage current of PZT/CeO 2 /Si is as low as 10 -7 A/cm 2 at 8 V.

Original languageEnglish
Pages (from-to)423-428
Number of pages6
JournalApplied Surface Science
Volume117-118
DOIs
StatePublished - 2 Jun 1997

Keywords

  • CeO
  • Ferroelectric
  • MFSFETs
  • PZT
  • Vacuum evaporation

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