Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator 252102

Cheon An Lee; Dong Wook Park; Sung Hun Jin; Han Park; Jong Duk Lee; Byung Gook Park

doi:10.1063/1.2213969

Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator 252102

Cheon An Lee, Dong Wook Park, Sung Hun Jin, Han Park, Jong Duk Lee, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

The origin of the hysteresis phenomenon in bottom-contact pentacene organic thin-film transistors (OTFTs) with cross-linked poly(vinyl alcohol) (PVA) insulator is studied. From electrical measurements with various sweep ranges and two different sweep directions, the hysteresis effect is presumed to be caused by the electrons or holes that could be injected from the gate and trapped in the PVA bulk, rather than by the polarization or internally existing mobile ions. 'Die assumption is confirmed by the clear reduction of hysteresis in OTFTs with a blocking oxide layer between gate and PVA insulator.

Original language	English
Article number	252102
Journal	Applied Physics Letters
Volume	88
Issue number	25
DOIs	https://doi.org/10.1063/1.2213969
State	Published - 19 Jun 2006

Access to Document

10.1063/1.2213969

Cite this

@article{1799b7d377ce43ef9ec85faf7a3dcfdf,

title = "Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator 252102",

abstract = "The origin of the hysteresis phenomenon in bottom-contact pentacene organic thin-film transistors (OTFTs) with cross-linked poly(vinyl alcohol) (PVA) insulator is studied. From electrical measurements with various sweep ranges and two different sweep directions, the hysteresis effect is presumed to be caused by the electrons or holes that could be injected from the gate and trapped in the PVA bulk, rather than by the polarization or internally existing mobile ions. 'Die assumption is confirmed by the clear reduction of hysteresis in OTFTs with a blocking oxide layer between gate and PVA insulator.",

author = "Lee, {Cheon An} and Park, {Dong Wook} and Jin, {Sung Hun} and Han Park and Lee, {Jong Duk} and Park, {Byung Gook}",

year = "2006",

month = jun,

day = "19",

doi = "10.1063/1.2213969",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator 252102

AU - Lee, Cheon An

AU - Park, Dong Wook

AU - Jin, Sung Hun

AU - Park, Han

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 2006/6/19

Y1 - 2006/6/19

N2 - The origin of the hysteresis phenomenon in bottom-contact pentacene organic thin-film transistors (OTFTs) with cross-linked poly(vinyl alcohol) (PVA) insulator is studied. From electrical measurements with various sweep ranges and two different sweep directions, the hysteresis effect is presumed to be caused by the electrons or holes that could be injected from the gate and trapped in the PVA bulk, rather than by the polarization or internally existing mobile ions. 'Die assumption is confirmed by the clear reduction of hysteresis in OTFTs with a blocking oxide layer between gate and PVA insulator.

AB - The origin of the hysteresis phenomenon in bottom-contact pentacene organic thin-film transistors (OTFTs) with cross-linked poly(vinyl alcohol) (PVA) insulator is studied. From electrical measurements with various sweep ranges and two different sweep directions, the hysteresis effect is presumed to be caused by the electrons or holes that could be injected from the gate and trapped in the PVA bulk, rather than by the polarization or internally existing mobile ions. 'Die assumption is confirmed by the clear reduction of hysteresis in OTFTs with a blocking oxide layer between gate and PVA insulator.

UR - http://www.scopus.com/inward/record.url?scp=33745454957&partnerID=8YFLogxK

U2 - 10.1063/1.2213969

DO - 10.1063/1.2213969

M3 - Article

AN - SCOPUS:33745454957

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252102

ER -

Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator 252102

Abstract

Access to Document

Other files and links

Fingerprint

Cite this